Direct observation of half-metallic energy gap in Co2MnSi by tunneling conductance spectroscopy

Y. Sakuraba; T. Miyakoshi; M. Oogane; Y. Ando; A. Sakuma; T. Miyazaki; H. Kubota

doi:10.1063/1.2335583

Direct observation of half-metallic energy gap in Co₂MnSi by tunneling conductance spectroscopy

Y. Sakuraba, T. Miyakoshi, M. Oogane, Y. Ando, A. Sakuma, T. Miyazaki, H. Kubota

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

86 Citations (Scopus)

Abstract

Magnetic tunnel junctions with a Co₂MnSi/Al-O/CoFe structure are prepared by magnetron sputtering and investigated with respect to the energy gap near the Fermi energy level. The plasma oxidation time for the Al-O barrier is found to affect the condition of the Co₂MnSi/Al-O interface. The optimized sample (50 s oxidation time) exhibits a magnetoresistance ratio of 159% and tunneling spin polarization of 0.89 at 2 K. The bias voltage dependence of tunneling conductance (dI/dV-V) reveals a clear half-metallic energy gap at 350-400 meV for Co₂MnSi, with an energy separation of just 10 meV between the Fermi energy and the bottom edge of conduction band.

Original language	English
Article number	052508
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2335583
Publication status	Published - 2006 Sep 15

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Direct observation of half-metallic energy gap in Co2MnSi by tunneling conductance spectroscopy",

abstract = "Magnetic tunnel junctions with a Co2MnSi/Al-O/CoFe structure are prepared by magnetron sputtering and investigated with respect to the energy gap near the Fermi energy level. The plasma oxidation time for the Al-O barrier is found to affect the condition of the Co2MnSi/Al-O interface. The optimized sample (50 s oxidation time) exhibits a magnetoresistance ratio of 159% and tunneling spin polarization of 0.89 at 2 K. The bias voltage dependence of tunneling conductance (dI/dV-V) reveals a clear half-metallic energy gap at 350-400 meV for Co2MnSi, with an energy separation of just 10 meV between the Fermi energy and the bottom edge of conduction band.",

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T1 - Direct observation of half-metallic energy gap in Co2MnSi by tunneling conductance spectroscopy

AU - Sakuraba, Y.

AU - Miyakoshi, T.

AU - Oogane, M.

AU - Ando, Y.

AU - Sakuma, A.

AU - Miyazaki, T.

AU - Kubota, H.

PY - 2006/9/15

Y1 - 2006/9/15

N2 - Magnetic tunnel junctions with a Co2MnSi/Al-O/CoFe structure are prepared by magnetron sputtering and investigated with respect to the energy gap near the Fermi energy level. The plasma oxidation time for the Al-O barrier is found to affect the condition of the Co2MnSi/Al-O interface. The optimized sample (50 s oxidation time) exhibits a magnetoresistance ratio of 159% and tunneling spin polarization of 0.89 at 2 K. The bias voltage dependence of tunneling conductance (dI/dV-V) reveals a clear half-metallic energy gap at 350-400 meV for Co2MnSi, with an energy separation of just 10 meV between the Fermi energy and the bottom edge of conduction band.

AB - Magnetic tunnel junctions with a Co2MnSi/Al-O/CoFe structure are prepared by magnetron sputtering and investigated with respect to the energy gap near the Fermi energy level. The plasma oxidation time for the Al-O barrier is found to affect the condition of the Co2MnSi/Al-O interface. The optimized sample (50 s oxidation time) exhibits a magnetoresistance ratio of 159% and tunneling spin polarization of 0.89 at 2 K. The bias voltage dependence of tunneling conductance (dI/dV-V) reveals a clear half-metallic energy gap at 350-400 meV for Co2MnSi, with an energy separation of just 10 meV between the Fermi energy and the bottom edge of conduction band.

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