@inproceedings{3fa5ed8cbc8044149e91fc9e52e9793b,
title = "Direct observation of energy distribution of interface states at SiO2/4H-SiC interface",
abstract = "The energy distribution of the interface states at the SiO2/4HSiC(0001) interface was obtained using operando photoelectron spectroscopy. For the interface states, sharp and high density interface states were observed near the conduction band minimum and uniform interface states were present in the entire SiC bandgap. The uniform interface states observed in the whole gap were attributed to graphitic carbon clusters at the interface although the sharp interface states could not be assigned currently.",
author = "Y. Yamashita and R. Hasunuma and T. Nagata and T. Chikyow",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",
year = "2016",
doi = "10.1149/07512.0207ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "12",
pages = "207--211",
editor = "M. Dudley and M. Bakowski and N. Ohtani and K. Shenai and B. Raghothamachar",
booktitle = "Gallium Nitride and Silicon Carbide Power Technologies 6",
edition = "12",
}