Direct observation of energy distribution of interface states at SiO2/4H-SiC interface

Y. Yamashita, R. Hasunuma, T. Nagata, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The energy distribution of the interface states at the SiO2/4HSiC(0001) interface was obtained using operando photoelectron spectroscopy. For the interface states, sharp and high density interface states were observed near the conduction band minimum and uniform interface states were present in the entire SiC bandgap. The uniform interface states observed in the whole gap were attributed to graphitic carbon clusters at the interface although the sharp interface states could not be assigned currently.

Original languageEnglish
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies 6
EditorsN. Ohtani, M. Bakowski, K. Shenai, B. Raghothamachar, M. Dudley
PublisherElectrochemical Society Inc.
Pages207-211
Number of pages5
Edition12
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes
EventSymposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number12
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Direct observation of energy distribution of interface states at SiO<sub>2</sub>/4H-SiC interface'. Together they form a unique fingerprint.

Cite this