Direct observation of energy distribution of interface states at SiO2/4H-SiC interface

Y. Yamashita; R. Hasunuma; T. Nagata; T. Chikyow

doi:10.1149/07512.0207ecst

Direct observation of energy distribution of interface states at SiO₂/4H-SiC interface

Y. Yamashita, R. Hasunuma, T. Nagata, T. Chikyow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The energy distribution of the interface states at the SiO₂/4HSiC(0001) interface was obtained using operando photoelectron spectroscopy. For the interface states, sharp and high density interface states were observed near the conduction band minimum and uniform interface states were present in the entire SiC bandgap. The uniform interface states observed in the whole gap were attributed to graphitic carbon clusters at the interface although the sharp interface states could not be assigned currently.

Original language	English
Title of host publication	Gallium Nitride and Silicon Carbide Power Technologies 6
Editors	N. Ohtani, M. Bakowski, K. Shenai, B. Raghothamachar, M. Dudley
Publisher	Electrochemical Society Inc.
Pages	207-211
Number of pages	5
Edition	12
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/07512.0207ecst
Publication status	Published - 2016 Jan 1
Externally published	Yes
Event	Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2016 Oct 2 → 2016 Oct 7

Publication series

Name	ECS Transactions
Number	12
Volume	75
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting
Country	United States
City	Honolulu
Period	16/10/2 → 16/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/07512.0207ecst

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Yamashita, Y., Hasunuma, R., Nagata, T., & Chikyow, T. (2016). Direct observation of energy distribution of interface states at SiO₂/4H-SiC interface. In N. Ohtani, M. Bakowski, K. Shenai, B. Raghothamachar, & M. Dudley (Eds.), Gallium Nitride and Silicon Carbide Power Technologies 6 (12 ed., pp. 207-211). (ECS Transactions; Vol. 75, No. 12). Electrochemical Society Inc.. https://doi.org/10.1149/07512.0207ecst

Direct observation of energy distribution of interface states at SiO₂/4H-SiC interface. / Yamashita, Y.; Hasunuma, R.; Nagata, T.; Chikyow, T.

Gallium Nitride and Silicon Carbide Power Technologies 6. ed. / N. Ohtani; M. Bakowski; K. Shenai; B. Raghothamachar; M. Dudley. 12. ed. Electrochemical Society Inc., 2016. p. 207-211 (ECS Transactions; Vol. 75, No. 12).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamashita, Y, Hasunuma, R, Nagata, T & Chikyow, T 2016, Direct observation of energy distribution of interface states at SiO₂/4H-SiC interface. in N Ohtani, M Bakowski, K Shenai, B Raghothamachar & M Dudley (eds), Gallium Nitride and Silicon Carbide Power Technologies 6. 12 edn, ECS Transactions, no. 12, vol. 75, Electrochemical Society Inc., pp. 207-211, Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07512.0207ecst

Yamashita Y, Hasunuma R, Nagata T, Chikyow T. Direct observation of energy distribution of interface states at SiO₂/4H-SiC interface. In Ohtani N, Bakowski M, Shenai K, Raghothamachar B, Dudley M, editors, Gallium Nitride and Silicon Carbide Power Technologies 6. 12 ed. Electrochemical Society Inc. 2016. p. 207-211. (ECS Transactions; 12). https://doi.org/10.1149/07512.0207ecst

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