Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

Iwao Yagi, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

The channel formation of pentacene thin-film transistor (TFT) patterned by laser ablation method was studied. The analysis study was based on the direct observation of contact and channel resistance in the four-terminal TFT that was equipped with a gate electrode. The results revealed a change in the gate-voltage dependent contact resistance, with the gate-induced charge significantly reducing the contact resistance and increasing the source-drain resistance. The temperature dependence results indicated that the contact resistance was higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K.

Original languageEnglish
Pages (from-to)813-815
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number5
DOIs
Publication statusPublished - 2004 Feb 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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