Abstract
The channel formation of pentacene thin-film transistor (TFT) patterned by laser ablation method was studied. The analysis study was based on the direct observation of contact and channel resistance in the four-terminal TFT that was equipped with a gate electrode. The results revealed a change in the gate-voltage dependent contact resistance, with the gate-induced charge significantly reducing the contact resistance and increasing the source-drain resistance. The temperature dependence results indicated that the contact resistance was higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K.
| Original language | English |
|---|---|
| Pages (from-to) | 813-815 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2004 Feb 2 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)