Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

Iwao Yagi; Kazuhito Tsukagoshi; Yoshinobu Aoyagi

doi:10.1063/1.1645316

Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

Iwao Yagi, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article

100 Citations (Scopus)

Abstract

The channel formation of pentacene thin-film transistor (TFT) patterned by laser ablation method was studied. The analysis study was based on the direct observation of contact and channel resistance in the four-terminal TFT that was equipped with a gate electrode. The results revealed a change in the gate-voltage dependent contact resistance, with the gate-induced charge significantly reducing the contact resistance and increasing the source-drain resistance. The temperature dependence results indicated that the contact resistance was higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K.

Original language	English
Pages (from-to)	813-815
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	5
DOIs	https://doi.org/10.1063/1.1645316
Publication status	Published - 2004 Feb 2

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1645316

Fingerprint Dive into the research topics of 'Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method'. Together they form a unique fingerprint.

Cite this

Yagi, I., Tsukagoshi, K., & Aoyagi, Y. (2004). Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method. Applied Physics Letters, 84(5), 813-815. https://doi.org/10.1063/1.1645316

@article{984c892dc2bb43b6b9ad7c58aa333897,

title = "Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method",

abstract = "The channel formation of pentacene thin-film transistor (TFT) patterned by laser ablation method was studied. The analysis study was based on the direct observation of contact and channel resistance in the four-terminal TFT that was equipped with a gate electrode. The results revealed a change in the gate-voltage dependent contact resistance, with the gate-induced charge significantly reducing the contact resistance and increasing the source-drain resistance. The temperature dependence results indicated that the contact resistance was higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K.",

author = "Iwao Yagi and Kazuhito Tsukagoshi and Yoshinobu Aoyagi",

year = "2004",

month = feb,

day = "2",

doi = "10.1063/1.1645316",

language = "English",

volume = "84",

pages = "813--815",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

AU - Yagi, Iwao

AU - Tsukagoshi, Kazuhito

AU - Aoyagi, Yoshinobu

PY - 2004/2/2

Y1 - 2004/2/2

N2 - The channel formation of pentacene thin-film transistor (TFT) patterned by laser ablation method was studied. The analysis study was based on the direct observation of contact and channel resistance in the four-terminal TFT that was equipped with a gate electrode. The results revealed a change in the gate-voltage dependent contact resistance, with the gate-induced charge significantly reducing the contact resistance and increasing the source-drain resistance. The temperature dependence results indicated that the contact resistance was higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K.

AB - The channel formation of pentacene thin-film transistor (TFT) patterned by laser ablation method was studied. The analysis study was based on the direct observation of contact and channel resistance in the four-terminal TFT that was equipped with a gate electrode. The results revealed a change in the gate-voltage dependent contact resistance, with the gate-induced charge significantly reducing the contact resistance and increasing the source-drain resistance. The temperature dependence results indicated that the contact resistance was higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K.

UR - http://www.scopus.com/inward/record.url?scp=1242264008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1242264008&partnerID=8YFLogxK

U2 - 10.1063/1.1645316

DO - 10.1063/1.1645316

M3 - Article

AN - SCOPUS:1242264008

VL - 84

SP - 813

EP - 815

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -