Abstract
Nanoscale spectromicroscopic characterizing technique is indispensable for realization of future high-speed graphene transistors. Highly spatially resolved soft X-ray photoelectron microscopy measurements have been performed using our "3D nano-ESCA" (three-dimensional nanoscale electron spectroscopy for chemical analysis) equipment in order to investigate the local electronic states at interfaces in a graphene device structure. We have succeeded in detecting a charge transfer region at the graphene/metal-electrode interface, which extends over ∼500 nm with the energy difference of 60 meV. Moreover, a nondestructive depth profiling reveals the chemical properties of the graphene/SiO2-substrate interface.
Original language | English |
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Article number | 241604 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2013 Jun 17 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)