Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy

T. Yokoyama, R. Takenaka, Y. Kamimura, K. Edagawa, I. Yonenaga

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5 Citations (Scopus)

Abstract

The local electrical resistivities in deformed n-GaP have been measured by scanning spreading resistance microscopy (SSRM). The SSRM images show chainlike alignments of spots with high resistivity along the slip direction. These spots can be attributed to carrier-depletion around a charged dislocation. From the observed spot size, the line charge density of the dislocations has been estimated to be 0.4-0.9e/b, where b denotes the magnitude of the Burgers vector. The estimated value of line charge density has been discussed in relation with the dislocation core structure.

Original languageEnglish
Article number202108
JournalApplied Physics Letters
Volume95
Issue number20
DOIs
Publication statusPublished - 2009 Nov 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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