Direct observation of basal dislocation in sapphire by HRTEM

Atsutomo Nakamura, Takahisa Yamamoto, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    42 Citations (Scopus)

    Abstract

    Sapphire was compressed at 1400°C to activate basal slip, and the core structure of introduced basal dislocations was directly observed by HRTEM from a direction parallel to the dislocation line. It was confirmed that the basal dislocation dissociates into two half partial dislocations by the self-climb mechanism as suggested in a previous report. The two partials separated with a certain distance along the [0001] direction, which is normal to the glide plane. On the other hand, it was found that glide dissociation is not developed in the basal dislocation. This result implies that after the glide motion of the basal dislocation had stopped, glide dissociation makes a change to climb dissociation in the core of the dislocation.

    Original languageEnglish
    Pages (from-to)101-108
    Number of pages8
    JournalActa Materialia
    Volume50
    Issue number1
    DOIs
    Publication statusPublished - 2002 Jan 8

    Keywords

    • Dislocations
    • High temperature
    • High-resolution transmission electron microscopy (HRTEM)
    • Sapphire (α-AlO)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Polymers and Plastics
    • Metals and Alloys

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