Direct Measurements of Trap Density in a SiGe/Si Hetero-Interface and Correlation between the Trap Density and Low-Frequency Noise in SiGe-Channel pMOSFETs

Toshiaki Tsuchiya, Yuji Imada, Junichi Murota

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The interface trap density in a SiGe/Si heterostructure has been successfully measured for the first time using a low-temperature charge pumping technique in a SiGe-channel pMOSFET, avoiding interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low-frequency noise in the SiGe pMOSFETs has been measured to investigate any correlation with the trap density observed at the SiGe/Si hetero-interface. A good correlation was obtained between the measured interface trap density in the heterostructure and the low-frequency noise level in the current flowing in the SiGe-channel.

Original languageEnglish
Pages (from-to)2507-2512
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume50
Issue number12
DOIs
Publication statusPublished - 2003 Dec

Keywords

  • Charge pumping technique
  • Hetero-interface trap
  • Low-frequency noise
  • MOSFETs
  • SiGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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