Direct measurement of titanium pipe diffusion coefficients in sapphire

T. Nakagawa, I. Sakaguchi, N. Shibata, K. Matsunaga, T. Mizoguchi, T. Yamamoto, H. Haneda, Y. Ikuhara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The diffusion behavior of Ti3+ along basal dislocations in sapphire has been investigated by SIMS technique. High-density unidirectional dislocations were introduced by the high-temperature mechanical deformation, and Ti3+ ions were subsequently diffused along the dislocations. The SIMS diffusion profiles clearly showed diffusion tail due to the short circuit diffusion along the dislocations called pipe diffusion. Lattice diffusion coefficient and pipe diffusion coefficient of Ti3+ at 1300°C were measured to be 1.0±0.2×10-19 [m2/sec] and 2.0±0.6× 10-13 [m2/sec], respectively.

Original languageEnglish
Title of host publicationRecrystallization and Grain Growth III - Proceedings of the Third International Conference on Recrystallization and Grain Growth, ReX and GG III
PublisherTrans Tech Publications Ltd
Pages939-942
Number of pages4
EditionPART 2
ISBN (Print)087849443X, 9780878494439
DOIs
Publication statusPublished - 2007 Jan 1
Externally publishedYes
Event3rd International Conference on Recrystallization and Grain Growth, ReX GG III - Jeju Island, Korea, Republic of
Duration: 2007 Jun 102007 Jun 15

Publication series

NameMaterials Science Forum
NumberPART 2
Volume558-559
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other3rd International Conference on Recrystallization and Grain Growth, ReX GG III
CountryKorea, Republic of
CityJeju Island
Period07/6/1007/6/15

Keywords

  • Alumina
  • Impurity
  • SIMS
  • Single crystal α- AlO
  • Titanium
  • Tracer exchange and diffusion profiling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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