@inproceedings{969a16f9c3c847ddb3dffbda3a698222,
title = "Direct measurement of titanium pipe diffusion coefficients in sapphire",
abstract = "The diffusion behavior of Ti3+ along basal dislocations in sapphire has been investigated by SIMS technique. High-density unidirectional dislocations were introduced by the high-temperature mechanical deformation, and Ti3+ ions were subsequently diffused along the dislocations. The SIMS diffusion profiles clearly showed diffusion tail due to the short circuit diffusion along the dislocations called pipe diffusion. Lattice diffusion coefficient and pipe diffusion coefficient of Ti3+ at 1300°C were measured to be 1.0±0.2×10-19 [m2/sec] and 2.0±0.6× 10-13 [m2/sec], respectively.",
keywords = "Alumina, Impurity, SIMS, Single crystal α- AlO, Titanium, Tracer exchange and diffusion profiling",
author = "T. Nakagawa and I. Sakaguchi and N. Shibata and K. Matsunaga and T. Mizoguchi and T. Yamamoto and H. Haneda and Y. Ikuhara",
year = "2007",
month = jan,
day = "1",
doi = "10.4028/0-87849-443-x.939",
language = "English",
isbn = "087849443X",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "939--942",
booktitle = "Recrystallization and Grain Growth III - Proceedings of the Third International Conference on Recrystallization and Grain Growth, ReX and GG III",
edition = "PART 2",
note = "3rd International Conference on Recrystallization and Grain Growth, ReX GG III ; Conference date: 10-06-2007 Through 15-06-2007",
}