Direct measurement of surface stress during Bi-mediated Ge growth on Si

Hidehito Asaoka, Tatsuya Yamazaki, Kenji Yamaguchi, Shin Ichi Shamoto, Sergey Filimonov, Maki Suemitsu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have focused on stress measurements during Bi termination of Si (111) and Ge growth on this Bi-mediated Si (111). In order to obtain information on both the surface stress and the surface structure simultaneously, we have combined the surface-curvature and the reflection-high-electron-energy- diffraction instrumentations in an identical ultrahigh vacuum system. We find the Bi-terminated Si (111) √3 × √3-β surface releases 1.8 N/m (= J/m2), or (1.4 eV/(1 × 1 unit cell)), of the surface energy from the strong tensile Si (111) 7 × 7 reconstruction. Subsequent Ge deposition on the Bi-terminated Si surface develops a compressive stress, which oscillates with a period corresponding to the growth of a single bilayer. The real-time stress measurement provides a direct evidence for this oscillatory stress relaxation in the layer-by-layer growth.

Original languageEnglish
Pages (from-to)157-160
Number of pages4
JournalSurface Science
Volume609
DOIs
Publication statusPublished - 2013 Mar 1

Keywords

  • Molecular beam epitaxy
  • Stresses
  • Surface structure
  • Surfactant-mediated epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Asaoka, H., Yamazaki, T., Yamaguchi, K., Shamoto, S. I., Filimonov, S., & Suemitsu, M. (2013). Direct measurement of surface stress during Bi-mediated Ge growth on Si. Surface Science, 609, 157-160. https://doi.org/10.1016/j.susc.2012.12.002