Direct imaging of thermodynamic process in atom migration by using scanning tunneling microscopy

Yuji Suwa, Taro Hitosugi, Shinobu Matsuura, Seiji Heike, Satoshi Watanabe, Toshiyuki Onogi, Tomihiro Hashizume

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We report novel imaging of surface adatom migration that allowed us to probe the impurity atoms buried in a semiconductor, by scanning tunneling microscopy (STM). We adsorbed Ga atoms onto a chemically inactive H-terminated Si(100) surface, and directly observed thermal Ga-atomic motion near 100 K. By exploiting the fact that the STM image reveals the thermodynamic distribution function of atomic trajectories, we achieved high-sensitivity detection of a positional variation in the surface potential. The position of subsurface P dopants was thereby obtained, in combination with first principles calculations of electronic states.

Original languageEnglish
Pages (from-to)3085-3091
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number5 A
DOIs
Publication statusPublished - 2002 May
Externally publishedYes

Keywords

  • Dopant
  • First principles calculation
  • Gallium
  • Migration
  • STM
  • Silicon
  • Surface

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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