Abstract
We report novel imaging of surface adatom migration that allowed us to probe the impurity atoms buried in a semiconductor, by scanning tunneling microscopy (STM). We adsorbed Ga atoms onto a chemically inactive H-terminated Si(100) surface, and directly observed thermal Ga-atomic motion near 100 K. By exploiting the fact that the STM image reveals the thermodynamic distribution function of atomic trajectories, we achieved high-sensitivity detection of a positional variation in the surface potential. The position of subsurface P dopants was thereby obtained, in combination with first principles calculations of electronic states.
Original language | English |
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Pages (from-to) | 3085-3091 |
Number of pages | 7 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 41 |
Issue number | 5 A |
DOIs | |
Publication status | Published - 2002 May |
Externally published | Yes |
Keywords
- Dopant
- First principles calculation
- Gallium
- Migration
- STM
- Silicon
- Surface
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)