We report novel imaging of surface adatom migration that allowed us to probe the impurity atoms buried in a semiconductor, by scanning tunneling microscopy (STM). We adsorbed Ga atoms onto a chemically inactive H-terminated Si(100) surface, and directly observed thermal Ga-atomic motion near 100 K. By exploiting the fact that the STM image reveals the thermodynamic distribution function of atomic trajectories, we achieved high-sensitivity detection of a positional variation in the surface potential. The position of subsurface P dopants was thereby obtained, in combination with first principles calculations of electronic states.
|Number of pages||7|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - 2002 May|
- First principles calculation
ASJC Scopus subject areas
- Physics and Astronomy(all)