Direct imaging of thermodynamic process in atom migration by using scanning tunneling microscopy

Yuji Suwa; Taro Hitosugi; Shinobu Matsuura; Seiji Heike; Satoshi Watanabe; Toshiyuki Onogi; Tomihiro Hashizume

doi:10.1143/jjap.41.3085

Direct imaging of thermodynamic process in atom migration by using scanning tunneling microscopy

Yuji Suwa, Taro Hitosugi, Shinobu Matsuura, Seiji Heike, Satoshi Watanabe, Toshiyuki Onogi, Tomihiro Hashizume

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report novel imaging of surface adatom migration that allowed us to probe the impurity atoms buried in a semiconductor, by scanning tunneling microscopy (STM). We adsorbed Ga atoms onto a chemically inactive H-terminated Si(100) surface, and directly observed thermal Ga-atomic motion near 100 K. By exploiting the fact that the STM image reveals the thermodynamic distribution function of atomic trajectories, we achieved high-sensitivity detection of a positional variation in the surface potential. The position of subsurface P dopants was thereby obtained, in combination with first principles calculations of electronic states.

Original language	English
Pages (from-to)	3085-3091
Number of pages	7
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.41.3085
Publication status	Published - 2002 May
Externally published	Yes

Keywords

Dopant
First principles calculation
Gallium
Migration
STM
Silicon
Surface

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.41.3085

Cite this

Direct imaging of thermodynamic process in atom migration by using scanning tunneling microscopy. / Suwa, Yuji; Hitosugi, Taro; Matsuura, Shinobu; Heike, Seiji; Watanabe, Satoshi; Onogi, Toshiyuki; Hashizume, Tomihiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 5 A, 05.2002, p. 3085-3091.

Research output: Contribution to journal › Article › peer-review

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abstract = "We report novel imaging of surface adatom migration that allowed us to probe the impurity atoms buried in a semiconductor, by scanning tunneling microscopy (STM). We adsorbed Ga atoms onto a chemically inactive H-terminated Si(100) surface, and directly observed thermal Ga-atomic motion near 100 K. By exploiting the fact that the STM image reveals the thermodynamic distribution function of atomic trajectories, we achieved high-sensitivity detection of a positional variation in the surface potential. The position of subsurface P dopants was thereby obtained, in combination with first principles calculations of electronic states.",

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AU - Suwa, Yuji

AU - Hitosugi, Taro

AU - Matsuura, Shinobu

AU - Heike, Seiji

AU - Watanabe, Satoshi

AU - Onogi, Toshiyuki

AU - Hashizume, Tomihiro

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N2 - We report novel imaging of surface adatom migration that allowed us to probe the impurity atoms buried in a semiconductor, by scanning tunneling microscopy (STM). We adsorbed Ga atoms onto a chemically inactive H-terminated Si(100) surface, and directly observed thermal Ga-atomic motion near 100 K. By exploiting the fact that the STM image reveals the thermodynamic distribution function of atomic trajectories, we achieved high-sensitivity detection of a positional variation in the surface potential. The position of subsurface P dopants was thereby obtained, in combination with first principles calculations of electronic states.

AB - We report novel imaging of surface adatom migration that allowed us to probe the impurity atoms buried in a semiconductor, by scanning tunneling microscopy (STM). We adsorbed Ga atoms onto a chemically inactive H-terminated Si(100) surface, and directly observed thermal Ga-atomic motion near 100 K. By exploiting the fact that the STM image reveals the thermodynamic distribution function of atomic trajectories, we achieved high-sensitivity detection of a positional variation in the surface potential. The position of subsurface P dopants was thereby obtained, in combination with first principles calculations of electronic states.

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KW - First principles calculation

KW - Gallium

KW - Migration

KW - STM

KW - Silicon

KW - Surface

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Direct imaging of thermodynamic process in atom migration by using scanning tunneling microscopy

Abstract

Keywords

ASJC Scopus subject areas

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