In situ high-resolution transmission electron microscopy in the profile geometry has been used to observe the evolving features of the Au/InSb(111) B-(1 × 2) interface. During Au deposition in the range between 0 monolayer (ML) and ∼1 ML coverage, the outermost Sb-trimer layer of the InSb(111) B-(2 × 2) substrate changes in contrast, presumably revealing that deposited Au atoms are partially captured into it. At ∼2 ML coverage, an unknown phase emerges on the outermost layer, beyond which it continues to grow epitaxially in an island state, causing partial disruption of the substrate. The phase is identified as Au9In4 alloy with a γ-brass structure determined from a digital Fourier transform diffractogram and a transmission electron diffraction pattern. The epitaxial relationship of Au9In4 with the substrate is given by (111)InSb∥(111) Au9In4 and  InSb∥ Au9In4. The high resolution-profile transmission electron microscopy images of this alloy agree well with the results calculated by the multislice method.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1998|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering