Direct imaging of the evolving Au/InSb(111) B interface

Tetsuya Mishima, Jun Nakamura, Kenji Tsukada, Masayasu Nishizawa, Toyoaki Eguchi, Toshiaki Osaka

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

In situ high-resolution transmission electron microscopy in the profile geometry has been used to observe the evolving features of the Au/InSb(111) B-(1 × 2) interface. During Au deposition in the range between 0 monolayer (ML) and ∼1 ML coverage, the outermost Sb-trimer layer of the InSb(111) B-(2 × 2) substrate changes in contrast, presumably revealing that deposited Au atoms are partially captured into it. At ∼2 ML coverage, an unknown phase emerges on the outermost layer, beyond which it continues to grow epitaxially in an island state, causing partial disruption of the substrate. The phase is identified as Au9In4 alloy with a γ-brass structure determined from a digital Fourier transform diffractogram and a transmission electron diffraction pattern. The epitaxial relationship of Au9In4 with the substrate is given by (111)InSb∥(111) Au9In4 and [110] InSb∥[110] Au9In4. The high resolution-profile transmission electron microscopy images of this alloy agree well with the results calculated by the multislice method.

Original languageEnglish
Pages (from-to)2324-2327
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
DOIs
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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