Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well

Jun Ishihara, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

Using time- and spatially-resolved Kerr microscopy, we directly measure the spatiotemporal evolution of photoexcited local spins of a twodimensional electron gas in a modulation-doped GaAs/AlGaAs quantum well with a top gate electrode. The spatial pattern of spins after diffusion is controlled by a gate voltage that changes the strength of the spin-orbit interaction (SOI) field. By measuring the time dependence of spin distribution with an external magnetic field, we successfully observe a persistent spin helix state by tuning the gate voltage, and we obtain both Rashba and Dresselhauss SOI parameters separately.

Original languageEnglish
Article number013001
JournalApplied Physics Express
Volume7
Issue number1
DOIs
Publication statusPublished - 2014 Jan

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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