Direct Imaging of Current-Induced Antiferromagnetic Switching Revealing a Pure Thermomagnetoelastic Switching Mechanism in NiO

Hendrik Meer, Felix Schreiber, Christin Schmitt, Rafael Ramos, Eiji Saitoh, Olena Gomonay, Jairo Sinova, Lorenzo Baldrati, Mathias Kläui

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature-induced strain, and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile noncontact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.

Original languageEnglish
Pages (from-to)114-119
Number of pages6
JournalNano Letters
Volume21
Issue number1
DOIs
Publication statusPublished - 2021 Jan 13

Keywords

  • insulating antiferromagnets
  • magnetic domains
  • magnetization switching
  • spin Hall magnetoresistance
  • spintronics

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Direct Imaging of Current-Induced Antiferromagnetic Switching Revealing a Pure Thermomagnetoelastic Switching Mechanism in NiO'. Together they form a unique fingerprint.

Cite this