We report the layer-by-layer growth and electronic properties of (111)-oriented, nearly stoichiometric TiH2 films (δ-phase) pulsed-laser-deposited on α-Al2O3(0001) using a TiH2 ceramic target. The content of the δ-phase increased as the decomposition to the Ti metal was suppressed at low temperatures. Moreover, long-lasting oscillations of reflection high-energy electron diffraction intensity were observed during the initial growth of the δ-phase film. The film showed metallic conductivity down to low temperatures. The results of Ti 2p-3d resonant photoemission spectroscopy and Hall measurement were consistent with those of the conducting electrons residing in the Ti 3d states.
ASJC Scopus subject areas
- Physics and Astronomy(all)