Direct growth of metallic TiH2 thin films by pulsed laser deposition

Kohei Yoshimatsu; Takayuki Suzuki; Nobuo Tsuchimine; Koji Horiba; Hiroshi Kumigashira; Takayoshi Oshima; Akira Ohtomo

doi:10.7567/APEX.8.035801

Direct growth of metallic TiH₂ thin films by pulsed laser deposition

Kohei Yoshimatsu, Takayuki Suzuki, Nobuo Tsuchimine, Koji Horiba, Hiroshi Kumigashira, Takayoshi Oshima, Akira Ohtomo

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report the layer-by-layer growth and electronic properties of (111)-oriented, nearly stoichiometric TiH₂ films (δ-phase) pulsed-laser-deposited on α-Al₂O₃(0001) using a TiH₂ ceramic target. The content of the δ-phase increased as the decomposition to the Ti metal was suppressed at low temperatures. Moreover, long-lasting oscillations of reflection high-energy electron diffraction intensity were observed during the initial growth of the δ-phase film. The film showed metallic conductivity down to low temperatures. The results of Ti 2p-3d resonant photoemission spectroscopy and Hall measurement were consistent with those of the conducting electrons residing in the Ti 3d states.

Original language	English
Article number	035801
Journal	Applied Physics Express
Volume	8
Issue number	3
DOIs	https://doi.org/10.7567/APEX.8.035801
Publication status	Published - 2015 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Direct growth of metallic TiH2 thin films by pulsed laser deposition",

abstract = "We report the layer-by-layer growth and electronic properties of (111)-oriented, nearly stoichiometric TiH2 films (δ-phase) pulsed-laser-deposited on α-Al2O3(0001) using a TiH2 ceramic target. The content of the δ-phase increased as the decomposition to the Ti metal was suppressed at low temperatures. Moreover, long-lasting oscillations of reflection high-energy electron diffraction intensity were observed during the initial growth of the δ-phase film. The film showed metallic conductivity down to low temperatures. The results of Ti 2p-3d resonant photoemission spectroscopy and Hall measurement were consistent with those of the conducting electrons residing in the Ti 3d states.",

author = "Kohei Yoshimatsu and Takayuki Suzuki and Nobuo Tsuchimine and Koji Horiba and Hiroshi Kumigashira and Takayoshi Oshima and Akira Ohtomo",

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T1 - Direct growth of metallic TiH2 thin films by pulsed laser deposition

AU - Yoshimatsu, Kohei

AU - Suzuki, Takayuki

AU - Tsuchimine, Nobuo

AU - Horiba, Koji

AU - Kumigashira, Hiroshi

AU - Oshima, Takayoshi

AU - Ohtomo, Akira

PY - 2015/3/1

Y1 - 2015/3/1

N2 - We report the layer-by-layer growth and electronic properties of (111)-oriented, nearly stoichiometric TiH2 films (δ-phase) pulsed-laser-deposited on α-Al2O3(0001) using a TiH2 ceramic target. The content of the δ-phase increased as the decomposition to the Ti metal was suppressed at low temperatures. Moreover, long-lasting oscillations of reflection high-energy electron diffraction intensity were observed during the initial growth of the δ-phase film. The film showed metallic conductivity down to low temperatures. The results of Ti 2p-3d resonant photoemission spectroscopy and Hall measurement were consistent with those of the conducting electrons residing in the Ti 3d states.

AB - We report the layer-by-layer growth and electronic properties of (111)-oriented, nearly stoichiometric TiH2 films (δ-phase) pulsed-laser-deposited on α-Al2O3(0001) using a TiH2 ceramic target. The content of the δ-phase increased as the decomposition to the Ti metal was suppressed at low temperatures. Moreover, long-lasting oscillations of reflection high-energy electron diffraction intensity were observed during the initial growth of the δ-phase film. The film showed metallic conductivity down to low temperatures. The results of Ti 2p-3d resonant photoemission spectroscopy and Hall measurement were consistent with those of the conducting electrons residing in the Ti 3d states.

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Direct growth of metallic TiH₂ thin films by pulsed laser deposition

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