TY - JOUR
T1 - Direct growth of metallic TiH2 thin films by pulsed laser deposition
AU - Yoshimatsu, Kohei
AU - Suzuki, Takayuki
AU - Tsuchimine, Nobuo
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Oshima, Takayoshi
AU - Ohtomo, Akira
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/3/1
Y1 - 2015/3/1
N2 - We report the layer-by-layer growth and electronic properties of (111)-oriented, nearly stoichiometric TiH2 films (δ-phase) pulsed-laser-deposited on α-Al2O3(0001) using a TiH2 ceramic target. The content of the δ-phase increased as the decomposition to the Ti metal was suppressed at low temperatures. Moreover, long-lasting oscillations of reflection high-energy electron diffraction intensity were observed during the initial growth of the δ-phase film. The film showed metallic conductivity down to low temperatures. The results of Ti 2p-3d resonant photoemission spectroscopy and Hall measurement were consistent with those of the conducting electrons residing in the Ti 3d states.
AB - We report the layer-by-layer growth and electronic properties of (111)-oriented, nearly stoichiometric TiH2 films (δ-phase) pulsed-laser-deposited on α-Al2O3(0001) using a TiH2 ceramic target. The content of the δ-phase increased as the decomposition to the Ti metal was suppressed at low temperatures. Moreover, long-lasting oscillations of reflection high-energy electron diffraction intensity were observed during the initial growth of the δ-phase film. The film showed metallic conductivity down to low temperatures. The results of Ti 2p-3d resonant photoemission spectroscopy and Hall measurement were consistent with those of the conducting electrons residing in the Ti 3d states.
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U2 - 10.7567/APEX.8.035801
DO - 10.7567/APEX.8.035801
M3 - Article
AN - SCOPUS:84924003351
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 3
M1 - 035801
ER -