Direct growth of high-quality mono-layer graphene on insulating substrate by advanced plasma CVD

Toshiaki Kato, Rikizo Hatakeyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A transfer-free method for growing carrier-density controlled graphene directly on a SiO2 substrate has been realized for the first time by plasma chemical vapor deposition (CVD). Using this method, high-quality single-layer graphene sheets can be selectively grown between a Ni film and the SiO2 substrate. Systematic investigations reveal that the relatively thin Ni layer and plasma CVD are critical to the success of this unique method of graphene growth.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
Publication statusPublished - 2012 Nov 22
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 2012 Aug 202012 Aug 23

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period12/8/2012/8/23

Keywords

  • Direct growth
  • Graphene
  • Plasma CVD

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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