Direct growth of doping-density-controlled hexagonal graphene on SiO 2 substrate by rapid-heating plasma CVD

Toshiaki Kato, Rikizo Hatakeyama

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)


A transfer-free method for growing carrier-density-controlled graphene directly on a SiO 2 substrate has been realized for the first time by rapid-heating plasma chemical vapor deposition (RH-PCVD). Using this method, high-quality single-layer graphene sheets with a hexagonal domain can be selectively grown between a Ni film and a SiO 2 substrate. Systematic investigations reveal that the relatively thin Ni layer, rapid heating, and plasma CVD are critical to the success of this unique method of graphene growth. By applying this technique, an easy and scalable graphene-based field effect transistor (FET) fabrication is also demonstrated. The electrical transport type of the graphene-based FET can be precisely tuned by adjusting the NH 3 gas concentration during the RH-PCVD process.

Original languageEnglish
Pages (from-to)8508-8515
Number of pages8
JournalACS Nano
Issue number10
Publication statusPublished - 2012 Oct 23


  • carrier doping
  • direct growth
  • graphene sheet
  • plasma CVD

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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