Direct Ga deposition by low-energy focused ion-beam system

T. Chikyow, N. Koguchi, A. Shikanai

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Ga droplets were formed in line on a sulfur-terminated GaAs surface using a low-energy focused ion beam. Ga ions, picked from a liquid Ga ion source, were accelerated up to 10 kV to produce a focused ion beam. Subsequently, the ions were given a positive bias to reduce their kinetic energy by retarding lenses. The Ga ions softly landed on the surface and formed a series of Ga droplets. This method was found to be useful in making fine structures directly on semiconductor materials.

Original languageEnglish
Pages (from-to)254-258
Number of pages5
JournalSurface Science
Volume386
Issue number1-3
DOIs
Publication statusPublished - 1997 Oct 1
Externally publishedYes

Keywords

  • Ga droplet
  • GaAs
  • Low-energy focused ion beam
  • Selective growth

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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