Direct formation of fine structure by low energy focused ion beam

Toyohiro Chikyo, A. Shikanai, N. Koguchi

Research output: Contribution to journalConference articlepeer-review

Abstract

GaAs micro crystals in line were grown on a sulfur-terminated GaAs surface by low energy focused ion beam. Ga ions, picked out from a liquid Ga ion source, were accelerated up to 10 KV to obtain a focused ion beam. The ions were given a positive bias to reduce their kinetic energy by retarding lens.The Ga ions landed on the surface softly and formed a series of Ga droplets. By subsequent As molecule supply to the Ga droplet, GaAs micro crystals in line were grown. This method was found to be useful to make fine structures directly on the semiconductor materials.

Original languageEnglish
Pages (from-to)211-216
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume448
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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