TY - JOUR
T1 - Direct evidence for compositional fluctuation in sputtered Co-Cr thin films
AU - Hono, K.
AU - Maeda, Y.
AU - Li, J. L.
AU - Sakurai, T.
N1 - Funding Information:
This research was partially supported by Miyashita Research Foundation for Materials Science and by a Grant-in-Aid for Scientific Research on Priority Areas (No. 02254101-5, "Metallic Aritificial Superlattice" directed by Prof. Fujimori) from the Ministry of Education, Science and Culture, Japan.
PY - 1992/5
Y1 - 1992/5
N2 - Nano-scale concentration fluctuations in sputtered Co-23 at% Cr magnetic thin films were analyzed by atom probe field ion microscopy (APFIM). The atom probe concentration depth profile obtained from the film which was deposited on the W tip at 200°C clearly showed that the composition fluctuated significantly. The concentration of the Cr enriched region was in the range of 30-40 at% Cr, while that of the Cr depleted region was in the range of 5-10 at% Cr. This result proves that compositional fluctuations are present inside the grains of the Co-Cr sputtered film as suggested by the TEM observation of the chrysanthemum-like pattern (CP) structure.
AB - Nano-scale concentration fluctuations in sputtered Co-23 at% Cr magnetic thin films were analyzed by atom probe field ion microscopy (APFIM). The atom probe concentration depth profile obtained from the film which was deposited on the W tip at 200°C clearly showed that the composition fluctuated significantly. The concentration of the Cr enriched region was in the range of 30-40 at% Cr, while that of the Cr depleted region was in the range of 5-10 at% Cr. This result proves that compositional fluctuations are present inside the grains of the Co-Cr sputtered film as suggested by the TEM observation of the chrysanthemum-like pattern (CP) structure.
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U2 - 10.1016/0304-8853(92)90208-6
DO - 10.1016/0304-8853(92)90208-6
M3 - Letter
AN - SCOPUS:0001627066
SN - 0304-8853
VL - 110
SP - L254-L258
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - 3
ER -