Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

Yong Xu, Takeo Minari, Kazuhito Tsukagoshi, J. A. Chroboczek, Gerard Ghibaudo

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161 Citations (Scopus)


Organic field-effect transistors (OFETs) suffer from limitations such as low mobility of charge carriers and high access resistance. Direct and accurate evaluation of these quantities becomes crucial for understanding the OFETs properties. We introduce the Y function method (YFM) to pentacene OFETs. This method allows us to evaluate the low-field mobility without the access or contact resistance influence. The low-field mobility is shown to be more appropriate than the currently applied field-effect mobility for the OFETs' performance evaluation. Its unique advantage is to directly suppress the contact resistance influence in individual transistors, although such contact resistance is a constant as compared to the widely accepted variable one with respect to the gate voltage. After a comparison in detail with the transmission-line method, the YFM proved to be a fast and precise alternative method for the contact resistance evaluation. At the same time, how the contact resistance affects the effective mobility and the field-effect mobility in organic transistors is also addressed.

Original languageEnglish
Article number114507
JournalJournal of Applied Physics
Issue number11
Publication statusPublished - 2010 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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