Direct determination of In-dimer orientation of Si(001)2 × 3-In and 2 × 2-In surfaces

H. W. Yeom; T. Abukawa; M. Nakamura; X. Chen; S. Suzuki; S. Sato; K. Sakamoto; T. Sakamoto; S. Kono

doi:10.1016/0039-6028(95)00722-9

Direct determination of In-dimer orientation of Si(001)2 × 3-In and 2 × 2-In surfaces

H. W. Yeom, T. Abukawa, M. Nakamura, X. Chen, S. Suzuki, S. Sato, K. Sakamoto, T. Sakamoto, S. Kono

SR Core Research Division

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A well-ordered single-domain Si(001)2 × 3-In surface as well as a 2 × 2-In surface were made on a single-domain Si(001)2 × 1 substrate. Azimuthal X-ray photoelectron diffraction patterns of In 3d levels have been measured for the two surfaces and single-scattering cluster analyses have been made. It is clearly found that both surfaces are composed of basically similar overlayers of In dimers whose orientations are parallel to that of Si dimers of substrate.

Original language	English
Pages (from-to)	L983-L987
Journal	Surface Science
Volume	340
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(95)00722-9
Publication status	Published - 1995 Oct 10

Keywords

Angle resolved photoemission
Computer simulations
Indium
Metal-semiconductor interfaces
Photoelectron diffraction
Silicon

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(95)00722-9

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abstract = "A well-ordered single-domain Si(001)2 × 3-In surface as well as a 2 × 2-In surface were made on a single-domain Si(001)2 × 1 substrate. Azimuthal X-ray photoelectron diffraction patterns of In 3d levels have been measured for the two surfaces and single-scattering cluster analyses have been made. It is clearly found that both surfaces are composed of basically similar overlayers of In dimers whose orientations are parallel to that of Si dimers of substrate.",

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T1 - Direct determination of In-dimer orientation of Si(001)2 × 3-In and 2 × 2-In surfaces

AU - Yeom, H. W.

AU - Abukawa, T.

AU - Nakamura, M.

AU - Chen, X.

AU - Suzuki, S.

AU - Sato, S.

AU - Sakamoto, K.

AU - Sakamoto, T.

AU - Kono, S.

PY - 1995/10/10

Y1 - 1995/10/10

N2 - A well-ordered single-domain Si(001)2 × 3-In surface as well as a 2 × 2-In surface were made on a single-domain Si(001)2 × 1 substrate. Azimuthal X-ray photoelectron diffraction patterns of In 3d levels have been measured for the two surfaces and single-scattering cluster analyses have been made. It is clearly found that both surfaces are composed of basically similar overlayers of In dimers whose orientations are parallel to that of Si dimers of substrate.

AB - A well-ordered single-domain Si(001)2 × 3-In surface as well as a 2 × 2-In surface were made on a single-domain Si(001)2 × 1 substrate. Azimuthal X-ray photoelectron diffraction patterns of In 3d levels have been measured for the two surfaces and single-scattering cluster analyses have been made. It is clearly found that both surfaces are composed of basically similar overlayers of In dimers whose orientations are parallel to that of Si dimers of substrate.

KW - Angle resolved photoemission

KW - Computer simulations

KW - Indium

KW - Metal-semiconductor interfaces

KW - Photoelectron diffraction

KW - Silicon

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DO - 10.1016/0039-6028(95)00722-9

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SN - 0039-6028

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SP - L983-L987

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Direct determination of In-dimer orientation of Si(001)2 × 3-In and 2 × 2-In surfaces

Abstract

Keywords

ASJC Scopus subject areas

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