Direct determination of In-dimer orientation of Si(001)2 × 3-In and 2 × 2-In surfaces

H. W. Yeom, T. Abukawa, M. Nakamura, X. Chen, S. Suzuki, S. Sato, K. Sakamoto, T. Sakamoto, S. Kono

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26 Citations (Scopus)

Abstract

A well-ordered single-domain Si(001)2 × 3-In surface as well as a 2 × 2-In surface were made on a single-domain Si(001)2 × 1 substrate. Azimuthal X-ray photoelectron diffraction patterns of In 3d levels have been measured for the two surfaces and single-scattering cluster analyses have been made. It is clearly found that both surfaces are composed of basically similar overlayers of In dimers whose orientations are parallel to that of Si dimers of substrate.

Original languageEnglish
Pages (from-to)L983-L987
JournalSurface Science
Volume340
Issue number1-2
DOIs
Publication statusPublished - 1995 Oct 10

Keywords

  • Angle resolved photoemission
  • Computer simulations
  • Indium
  • Metal-semiconductor interfaces
  • Photoelectron diffraction
  • Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Yeom, H. W., Abukawa, T., Nakamura, M., Chen, X., Suzuki, S., Sato, S., Sakamoto, K., Sakamoto, T., & Kono, S. (1995). Direct determination of In-dimer orientation of Si(001)2 × 3-In and 2 × 2-In surfaces. Surface Science, 340(1-2), L983-L987. https://doi.org/10.1016/0039-6028(95)00722-9