Direct bonded aluminum on aluminum nitride substrates via a transient liquid phase and its application

Yoshirou Kuromitsu, Yoshiyuki Nagatomo, Hiroshi Tonomura, Kazuhiro Akiyama, Christine Marie Montesa, Naoya Shibata, Yuichi Ikuhara

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    A new bonding process has been developed for producing direct bonded aluminum (DBA) substrates using aluminum nitride (AlN). A transient eutectic liquid phase forms in aluminum-X (X = silicon, germanium, silver, or copper) systems at the interface between the aluminum foil and the AlN substrate. The aluminum-X liquid phase transiently contacts the AlN substrate prior to isothermal solidification by diffusion of the element X into the aluminum foil. We prepared DBA substrates using this process and demonstrated that they are highly stable after thermal cycling testing. Furthermore, we used this method to simultaneously bond and fabricate DBA substrates with an aluminum-alloy base plate. We confirmed that this new process for fabricating DBA substrates with an aluminum-alloy base plate has the potential to be cost-effective and to be applied to produce high-reliability, high-power modules used under conditions of severe thermal stress.

    Original languageEnglish
    Title of host publication2010 6th International Conference on Integrated Power Electronics Systems, CIPS 2010
    Publication statusPublished - 2011 Apr 12
    Event2010 6th International Conference on Integrated Power Electronics Systems, CIPS 2010 - Nuremberg, Germany
    Duration: 2010 Mar 162010 Mar 18

    Other

    Other2010 6th International Conference on Integrated Power Electronics Systems, CIPS 2010
    CountryGermany
    CityNuremberg
    Period10/3/1610/3/18

    ASJC Scopus subject areas

    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

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