Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope

Lin Gu, Yan Yu, Wilfried Sigle, Noritaka Usami, Susumu Tsukimoto, Joachim Maier, Yuichi Ikuhara, Peter A. Van Aken

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    9 Citations (Scopus)

    Abstract

    We demonstrate a three-dimensionally macroporous Si 9R polytype that exhibits a different electronic structure than bulk diamond-structured Si. Unlike the latter one which has an indirect-bandgap transition close to the zone boundary, the conduction band minimum in this material, as revealed by valence electron energy-loss spectroscopy in a monochromated transmission electron microscope, significantly shifts toward the point within a range from 0.6 to 5.6 nm-1, indicating substantially less momentum transfer required to fulfill the bandgap transition.

    Original languageEnglish
    Article number213102
    JournalApplied Physics Letters
    Volume97
    Issue number21
    DOIs
    Publication statusPublished - 2010 Nov 22

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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