Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope

Lin Gu; Yan Yu; Wilfried Sigle; Noritaka Usami; Susumu Tsukimoto; Joachim Maier; Yuichi Ikuhara; Peter A. Van Aken

doi:10.1063/1.3518703

Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope

Lin Gu, Yan Yu, Wilfried Sigle, Noritaka Usami, Susumu Tsukimoto, Joachim Maier, Yuichi Ikuhara, Peter A. Van Aken

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We demonstrate a three-dimensionally macroporous Si 9R polytype that exhibits a different electronic structure than bulk diamond-structured Si. Unlike the latter one which has an indirect-bandgap transition close to the zone boundary, the conduction band minimum in this material, as revealed by valence electron energy-loss spectroscopy in a monochromated transmission electron microscope, significantly shifts toward the point within a range from 0.6 to 5.6 nm-1, indicating substantially less momentum transfer required to fulfill the bandgap transition.

Original language	English
Article number	213102
Journal	Applied Physics Letters
Volume	97
Issue number	21
DOIs	https://doi.org/10.1063/1.3518703
Publication status	Published - 2010 Nov 22

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3518703

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title = "Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope",

abstract = "We demonstrate a three-dimensionally macroporous Si 9R polytype that exhibits a different electronic structure than bulk diamond-structured Si. Unlike the latter one which has an indirect-bandgap transition close to the zone boundary, the conduction band minimum in this material, as revealed by valence electron energy-loss spectroscopy in a monochromated transmission electron microscope, significantly shifts toward the point within a range from 0.6 to 5.6 nm-1, indicating substantially less momentum transfer required to fulfill the bandgap transition.",

author = "Lin Gu and Yan Yu and Wilfried Sigle and Noritaka Usami and Susumu Tsukimoto and Joachim Maier and Yuichi Ikuhara and {Van Aken}, {Peter A.}",

note = "Funding Information: We acknowledge financial support from the European Union under the Framework 6 program under a contract for an Integrated Infrastructure Initiative Reference 026019 ESTEEM and Japan Society for the Promotion of Science Grant-in-Aid for Young Scientists Reference 22760506. Y.Y. is grateful for the scholarship from the Alexander von Humboldt foundation. ",

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AU - Gu, Lin

AU - Yu, Yan

AU - Sigle, Wilfried

AU - Usami, Noritaka

AU - Tsukimoto, Susumu

AU - Maier, Joachim

AU - Ikuhara, Yuichi

AU - Van Aken, Peter A.

N1 - Funding Information: We acknowledge financial support from the European Union under the Framework 6 program under a contract for an Integrated Infrastructure Initiative Reference 026019 ESTEEM and Japan Society for the Promotion of Science Grant-in-Aid for Young Scientists Reference 22760506. Y.Y. is grateful for the scholarship from the Alexander von Humboldt foundation.

PY - 2010/11/22

Y1 - 2010/11/22

N2 - We demonstrate a three-dimensionally macroporous Si 9R polytype that exhibits a different electronic structure than bulk diamond-structured Si. Unlike the latter one which has an indirect-bandgap transition close to the zone boundary, the conduction band minimum in this material, as revealed by valence electron energy-loss spectroscopy in a monochromated transmission electron microscope, significantly shifts toward the point within a range from 0.6 to 5.6 nm-1, indicating substantially less momentum transfer required to fulfill the bandgap transition.

AB - We demonstrate a three-dimensionally macroporous Si 9R polytype that exhibits a different electronic structure than bulk diamond-structured Si. Unlike the latter one which has an indirect-bandgap transition close to the zone boundary, the conduction band minimum in this material, as revealed by valence electron energy-loss spectroscopy in a monochromated transmission electron microscope, significantly shifts toward the point within a range from 0.6 to 5.6 nm-1, indicating substantially less momentum transfer required to fulfill the bandgap transition.

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Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope

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