TY - JOUR
T1 - Dimer buckling of the Si(001)2×1 surface below 10 K observed by low-temperature scanning tunneling microscopy
AU - Ono, Masanori
AU - Kamoshida, A.
AU - Matsuura, N.
AU - Ishikawa, E.
AU - Eguchi, T.
AU - Hasegawa, Y.
PY - 2003/5/14
Y1 - 2003/5/14
N2 - Using scanning tunneling microscopy (STM), we studied the dimer structure of the Si(001)2 × 1 surface at low temperature (<10 K). Asymmetric (buckled) dimer structure, locally forming c(4 × 2) or p(2 × 2) periodicity, was observed with positive sample bias voltages, while most of the dimers appear symmetric with negative bias voltages. Our observation indicates that actual dimer structure is asymmetric and that the apparent symmetric dimer observation is due to an artifact induced by STM imaging. Since a transition temperature between the buckled- and symmetric-dimer imaging, which is found to be ∼40 K, corresponds to the temperature where the carrier density changes dramatically from intrinsic to saturation range, the apparent symmetric-dimer imaging should be related with the reduced carrier density and ensuing charging effect.
AB - Using scanning tunneling microscopy (STM), we studied the dimer structure of the Si(001)2 × 1 surface at low temperature (<10 K). Asymmetric (buckled) dimer structure, locally forming c(4 × 2) or p(2 × 2) periodicity, was observed with positive sample bias voltages, while most of the dimers appear symmetric with negative bias voltages. Our observation indicates that actual dimer structure is asymmetric and that the apparent symmetric dimer observation is due to an artifact induced by STM imaging. Since a transition temperature between the buckled- and symmetric-dimer imaging, which is found to be ∼40 K, corresponds to the temperature where the carrier density changes dramatically from intrinsic to saturation range, the apparent symmetric-dimer imaging should be related with the reduced carrier density and ensuing charging effect.
UR - http://www.scopus.com/inward/record.url?scp=0037965027&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037965027&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.67.201306
DO - 10.1103/PhysRevB.67.201306
M3 - Article
AN - SCOPUS:0037965027
VL - 67
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 20
ER -