Diluted magnetic III-V semiconductors

H. Munekata, H. Ohno, S. Von Molnar, Armin Segm̈ller, L. L. Chang, L. Esaki

Research output: Contribution to journalArticlepeer-review

976 Citations (Scopus)

Abstract

A new diluted magnetic III-V semiconductor of In1-xMnxAs (x0.18) has been produced by molecular-beam epitaxy. Films grown at 300°C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200°C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.

Original languageEnglish
Pages (from-to)1849-1852
Number of pages4
JournalPhysical Review Letters
Volume63
Issue number17
DOIs
Publication statusPublished - 1989 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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