Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum

Nobuyuki Otsuka, Jun Ichi Nishizawa, Yutaka Oyama, Hideyuki Kikuchi, Ken Suto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Intermittent injection of trisdimethylaminophosphorus (TDMAP) is applied for selective etching of the InP in ultrahigh vacuum by using molecular layer epitaxy equipment. The etching depth is controlled by the number of injection cycles of TDMAP in a self- limiting fashion. The etch rate per injection cycle increases with the injection time of TDMAP and is saturated. The etch rate is well described by a Langmuir-type equation. The etch rate is independent of the injection time at times longer than 0.3 s, and is also independent of the injection pressure of TDMAP. This is almost independent of the evacuation time. The activation energy for etching with TDMAP is determined to be 1.27 eV, which is half of that for the decomposition of phosphorus from InP substrate. Well-controlled digital etching is realized at substrate temperatures as low as 350°C.

Original languageEnglish
Pages (from-to)547-550
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number2
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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