Digital etching of (001) InP substrate by intermittent injection of tertiarybutylphosphine in ultrahigh vacuum

Nobuyuki Otsuka, Yutaka Oyama, Hideyuki Kikuchi, Jun Ichi Nishizawa, Ken Suto

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The intermittent injection of tertiarybutylphosphine (TBP), the injection and the evacuation of which are cyclically repeated, has been used for the selective-area etching of an InP (001) surface to study the surface adsorption/desorption mechanism in ultrahigh vacuum. Digital etching is achieved, as described by a modified Langmuir-type equation. It is assumed that TBP adheres to the surface within 0.1 s even at an injection pressure of 3 × 10-5 Torr and prevents phosphorus dissociation during evacuation times longer than 5 s. The activation energy of 18 kcal/mol (at 340-390°C) is lower than that using tris-dimethylaminophosphorus. A specular surface is obtained on a sulfur-doped substrate.

Original languageEnglish
Pages (from-to)L1509-L1512
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number12 SUPPL. B
DOIs
Publication statusPublished - 1998 Dec 15

Keywords

  • Activation energy
  • Digital etching
  • Indium phosphide
  • Intermittent injection
  • Langmuir-type equation
  • Molecular layer epitaxy
  • Self-limiting etching
  • Tertiarybutylphosphine
  • Ultrahigh vacuum

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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