Digital electron microscopy on advanced materials

D. Shindo, Y. Ikematsu, S. H. Lim, I. Yonenaga

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

Digital electron microscopy has been developed and applied to the structure analysis of advanced materials such as semiconductors and alloys. First of all, quantitative high-resolution electron microscopy was carried out on a Z-type faulted dipole in GaAs with the through-focus method. Through the quantitative analysis of the high-resolution images, the atomic displacement around the stacking fault was accurately evaluated. In the analysis of electron diffraction patterns of a Cu0.725Pd0.275 alloy, an energy filter was utilized to obtain electron diffraction patterns with a small background removing the inelastically scattered electrons. From the analysis of diffuse scattering of the Cu0.725Pd0.275 alloy, the short-range order parameters were quantitatively evaluated. Finally, it is pointed out that, based on the digital data of electron microscope images, the construction of the data base such as `EMILIA' (Electron Microscope Image Library and Archive: http://asma7.iamp.tohoku.ac.jp/EMILIA) is quite important for the future research of advanced materials characterization.

Original languageEnglish
Pages (from-to)375-384
Number of pages10
JournalMaterials Characterization
Volume44
Issue number4
DOIs
Publication statusPublished - 2000
Event5th IUMRS International Conference on Advance Materials - Beijing, China
Duration: 1999 Jun 131999 Jun 18

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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