Diffusion process of interstitial atoms in an electron irradiated InP studied by transmission electron microscopy

Yutaka Ohno, Nagahito Saitoh, Seiji Takeda, Mitsuji Hirata

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Growth of interstitial agglomerates, that are formed in InP by post-annealing above 700 K following 200 keV electron irradiation, has been systematically examined by transmission electron microscopy to understand the migration of point defects in InP. The nucleation and growth of the agglomerates stopped at an early stage of post-annealing. The number density of interstitial atoms in agglomerates, estimated after the growth of all agglomerates stops, did not depend on annealing temperature but on electron dose, and it increased quadratically with electron dose up to 2.5 × 1022 cm-2. These results were well explained by a model in which the agglomerates were formed through the migration of Ini-Pi interstitial-pairs. The migration energy for the pairs was estimated as 1.52 eV.

Original languageEnglish
Pages (from-to)5628-5632
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number9 A
DOIs
Publication statusPublished - 1997 Sep
Externally publishedYes

Keywords

  • Annealing
  • Diffusion
  • Electron irradiation
  • InP
  • Interstitial atoms
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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