Diffusion of nonstoichiometric defects in n-GaP crystals

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review


Diffusion of nonstoichiometry-related point defects from a LEC-grown GaP substrate to a Te-doped GaP n-type epitaxial layer was investigated by means of photocapacitance. It was revealed that deep donor level at EC - 2.1 eV was introduced into GaP substrate with annealing under phosphorus vapor pressure. Thus, the 2.1 eV deep level is thought to be involved with excess P atoms such as interstitial phosphorus atoms. In Te-doped crystal, 2.1 eV level was detected and the density increased as the time of substrate annealing increased. By measuring PHCAP spectra of samples with different thickness of epitaxial layer, diffusion profile of the defects from the substrate interface was obtained. From this, the diffusion coefficient at 850°C is estimated to be ∼ 8 × 10-11cm2/s.

Original languageEnglish
Pages (from-to)441-443
Number of pages3
JournalMaterials Science in Semiconductor Processing
Issue number5-6
Publication statusPublished - 2003 Oct 1


  • Diffusion
  • Liquid phase epitaxy
  • Photocapacitance
  • Te-doping

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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