Diffusion of gold into plastically deformed undoped and boron-doped silicon

A. Rodriguez Schachtrup, H. Bracht, I. Yonenaga, H. Mehrer

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Diffusion of Au into highly dislocated Si monocyrstals undoped and uniformly boron-doped with a B concentration of CB=3×10 19 cm-3 has been investigated with the aid of neutron-activation analysis (NAA) in conjunction with mechanical sectioning. Au profiles produced at diffusion temperatures of 900°C, 1000°C and 1100°C show Au diffusion to be enhanced in heavily B-doped Si compared to undoped samples. The profiles are completely described within the framework of the kick-out model and a mechanism which accounts for dislocation induced Au trapping. On the basis of these diffusion mechanisms Au profiles yield data for the transport capacity CAui eq DAui of interstitial Au. Data deduced for intrinsic conditions are consistent with corresponding results obtained by Au diffusion in dislocation-free Si under isoconcentration conditions. The observed doping dependence of C Aui eq DAui shows that Aui diffuses as a singly positively charged impurity in p-type Si which introduces a donor level at about 0.48 eV above the valence-band edge.

Original languageEnglish
Pages (from-to)1021-1026
Number of pages6
JournalDefect and Diffusion Forum
Volume143-147
DOIs
Publication statusPublished - 1997

Keywords

  • Boron-doped silicon
  • Diffusion
  • Dislocation
  • Fermi-level effect
  • Gold
  • Kick-out mechanism
  • Neutron-activation analysis
  • Segregation

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics

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