Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect

Tsubasa Nakagawa, Isao Sakaguchi, Masashi Uematsu, Yoshiyuki Sato, Naoki Ohashi, Hajime Haneda, Yuichi Ikuhara

    Research output: Contribution to journalArticle

    23 Citations (Scopus)

    Abstract

    Diffusion of gallium in single-crystal ZnO (implanted at 150keV at a dose of 2 × 1016 cm-2) in the temperature range between 800 and 900°C was investigated on the basis of experimentally measured and simulated profiles. The gallium concentration profiles have a characteristic tail with a constant-concentration region owing to the Fermi-level effect on the diffusion. The gallium concentration profiles were compared with the simulated profiles: both profiles are in good agreement. The simulation provides possible models for gallium diffusion based on the interstitialcy or vacancy mechanism.

    Original languageEnglish
    Pages (from-to)4099-4101
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume46
    Issue number7 A
    DOIs
    Publication statusPublished - 2007 Jul 4

    Keywords

    • Diffusion
    • Fermi-level effect
    • Gallium
    • Ion implantation
    • SIMS
    • ZnO

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect'. Together they form a unique fingerprint.

  • Cite this