Diffusion induced amorphization in the crystalline SrTiO 3 thin films grown on Si (1 0 0) investigated by combinatorial method

Parhat Ahmet, Takashi Koida, Masahiro Takakura, Kiyomi Nakajima, Mamoru Yoshimoto, Hideomi Koinuma, Miyoko Tanaka, Masaki Takeguchi, Toyohiro Chikyow

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Interface structures of SrTiO 3 (STO)/Si were investigated systematically using combinatorial method with growth temperature gradient in pulse laser deposition (PLD) and cross-sectional high-resolution transmission electron microscopy (HRTEM). Besides SiO 2 interfacial layer, another amorphized STO layer which lying on the SiO 2 interfacial layer was also observed in the crystalline STO thin films grown on Si (100) at growth temperatures above 600 °C. From the growth condition dependence studies on the formation of amorphized STO layers and the electron energy loss spectroscopy measurements, the origin of the amorphization was concluded as the diffusion of Si from substrate. This is the first observation of a diffusion induced amorphization phenomenon in the crystalline STO thin films grown on Si (100). Our results show that at higher growth temperatures, the interface structures of STO/Si are dominated by the diffusion of Si from the Si substrates.

Original languageEnglish
Pages (from-to)307-312
Number of pages6
JournalApplied Surface Science
Volume189
Issue number3-4
DOIs
Publication statusPublished - 2002 Apr 28
Externally publishedYes

Keywords

  • Amorphization
  • Combinatorial
  • Diffusion
  • Interface
  • Si
  • SrTiO

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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  • Cite this

    Ahmet, P., Koida, T., Takakura, M., Nakajima, K., Yoshimoto, M., Koinuma, H., Tanaka, M., Takeguchi, M., & Chikyow, T. (2002). Diffusion induced amorphization in the crystalline SrTiO 3 thin films grown on Si (1 0 0) investigated by combinatorial method Applied Surface Science, 189(3-4), 307-312. https://doi.org/10.1016/S0169-4332(01)01008-X