TY - JOUR
T1 - Diffusion barrier property of MnSixOy layer formed by chemical vapor deposition for Cu advanced interconnect application
AU - Nguyen, Mai Phuong
AU - Sutou, Yuji
AU - Koike, Junichi
N1 - Funding Information:
We would like to thank S. Hosaka, K. Maekawa and K. Matsumoto at Tokyo Electron Ltd. for their fruitful discussion. We appreciate T. Miyazaki at Tohoku University for his technical assistance with TEM analysis. This work was supported by JSPS Grant-in-Aid for Scientific Research (S) # 22226012 , Japan Science and Technology Agency (CREST) , and Tokyo Electron Ltd.
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
PY - 2015/4/1
Y1 - 2015/4/1
N2 - An amorphous manganese oxide layers formed by chemical vapor deposition have been studied as a copper diffusion barrier. The thermal stability of the barrier layer was assessed by annealing Cu/MnSixOy/SiO2/Si samples at 400 °C for various times up to 10 h. Transmission electron microscopy, energy-dispersive X-ray spectroscopy (EDX), secondary ion mass spectroscopy (SIMS), capacitance-voltage and current-voltage measurements were performed. Failure of the barrier property is marked by observing the copper peak appearing in EDX and SIMS spectra data from the SiO2 region. Amorphous MnSixOy barrier with a thickness of 1.2 nm has failed in preventing Cu diffusion into SiO2 substrate after anneal at 400°C in vacuum for 1h, as proven by the presence of Cu in the dielectric (SiO2) layer. However, the amorphous MnSixOy with the thickness of 2.0 nm barrier was thermally stable and could prevent Cu from inter-diffusion to the SiO2 substrate after annealing at 400 °C even up to 10 h.
AB - An amorphous manganese oxide layers formed by chemical vapor deposition have been studied as a copper diffusion barrier. The thermal stability of the barrier layer was assessed by annealing Cu/MnSixOy/SiO2/Si samples at 400 °C for various times up to 10 h. Transmission electron microscopy, energy-dispersive X-ray spectroscopy (EDX), secondary ion mass spectroscopy (SIMS), capacitance-voltage and current-voltage measurements were performed. Failure of the barrier property is marked by observing the copper peak appearing in EDX and SIMS spectra data from the SiO2 region. Amorphous MnSixOy barrier with a thickness of 1.2 nm has failed in preventing Cu diffusion into SiO2 substrate after anneal at 400°C in vacuum for 1h, as proven by the presence of Cu in the dielectric (SiO2) layer. However, the amorphous MnSixOy with the thickness of 2.0 nm barrier was thermally stable and could prevent Cu from inter-diffusion to the SiO2 substrate after annealing at 400 °C even up to 10 h.
KW - Chemical vapor deposition
KW - Cu diffusion barrier
KW - Interconnect application
KW - Manganese oxide
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U2 - 10.1016/j.tsf.2015.03.007
DO - 10.1016/j.tsf.2015.03.007
M3 - Article
AN - SCOPUS:84926170730
SN - 0040-6090
VL - 580
SP - 56
EP - 60
JO - Thin Solid Films
JF - Thin Solid Films
ER -