TY - JOUR
T1 - Diffraction of γ-rays with energies of 1.17 and 1.33MeV by a flat Si crystal
AU - Matsuba, Shunya
AU - Hayakawa, Takehito
AU - Shizuma, Toshiyuki
AU - Nishimori, Nobuyuki
AU - Nagai, Ryoji
AU - Sawamura, Masaru
AU - Angell, Christopher T.
AU - Fujiwara, Mamoru
AU - Hajima, Ryoichi
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015
Y1 - 2015
N2 - Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17MeV and the Si(440) diffraction for 1.33MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg's law and the experimental geometry.
AB - Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17MeV and the Si(440) diffraction for 1.33MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg's law and the experimental geometry.
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U2 - 10.7567/JJAP.54.052203
DO - 10.7567/JJAP.54.052203
M3 - Article
AN - SCOPUS:84983045032
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5
M1 - 052203
ER -