Diffraction of γ-rays with energies of 1.17 and 1.33MeV by a flat Si crystal

Shunya Matsuba, Takehito Hayakawa, Toshiyuki Shizuma, Nobuyuki Nishimori, Ryoji Nagai, Masaru Sawamura, Christopher T. Angell, Mamoru Fujiwara, Ryoichi Hajima

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17MeV and the Si(440) diffraction for 1.33MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg's law and the experimental geometry.

Original languageEnglish
Article number052203
JournalJapanese journal of applied physics
Volume54
Issue number5
DOIs
Publication statusPublished - 2015

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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