Diffraction of γ-rays with energies of 1.17 and 1.33MeV by a flat Si crystal

Shunya Matsuba; Takehito Hayakawa; Toshiyuki Shizuma; Nobuyuki Nishimori; Ryoji Nagai; Masaru Sawamura; Christopher T. Angell; Mamoru Fujiwara; Ryoichi Hajima

doi:10.7567/JJAP.54.052203

Diffraction of γ-rays with energies of 1.17 and 1.33MeV by a flat Si crystal

Shunya Matsuba, Takehito Hayakawa, Toshiyuki Shizuma, Nobuyuki Nishimori, Ryoji Nagai, Masaru Sawamura, Christopher T. Angell, Mamoru Fujiwara, Ryoichi Hajima

Center for Advanced Microscopy and Spectroscopy

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux ⁶⁰Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17MeV and the Si(440) diffraction for 1.33MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg's law and the experimental geometry.

Original language	English
Article number	052203
Journal	Japanese journal of applied physics
Volume	54
Issue number	5
DOIs	https://doi.org/10.7567/JJAP.54.052203
Publication status	Published - 2015

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Diffraction of γ-rays with energies of 1.17 and 1.33MeV by a flat Si crystal. / Matsuba, Shunya; Hayakawa, Takehito; Shizuma, Toshiyuki; Nishimori, Nobuyuki; Nagai, Ryoji; Sawamura, Masaru; Angell, Christopher T.; Fujiwara, Mamoru; Hajima, Ryoichi.

In: Japanese journal of applied physics, Vol. 54, No. 5, 052203, 2015.

Research output: Contribution to journal › Article › peer-review

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abstract = "Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17MeV and the Si(440) diffraction for 1.33MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg's law and the experimental geometry.",

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AU - Matsuba, Shunya

AU - Hayakawa, Takehito

AU - Shizuma, Toshiyuki

AU - Nishimori, Nobuyuki

AU - Nagai, Ryoji

AU - Sawamura, Masaru

AU - Angell, Christopher T.

AU - Fujiwara, Mamoru

AU - Hajima, Ryoichi

PY - 2015

Y1 - 2015

N2 - Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17MeV and the Si(440) diffraction for 1.33MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg's law and the experimental geometry.

AB - Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17MeV and the Si(440) diffraction for 1.33MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg's law and the experimental geometry.

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Diffraction of γ-rays with energies of 1.17 and 1.33MeV by a flat Si crystal

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