Different types of degradation and recovery mechanisms on NBT stress for thin SiO2 films by On-the-Fly measurement

A. Teramoto, R. Kuroda, T. Suko, M. Sato, T. Tsuboi, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the Negative Bias Temperature Instability (NBTI) characteristics induced by the conventional high voltage and the hole injection stresses using an On-the-Fly measurement technique. In the case of the conventional stress, the recovery rate just after the stress (<30 μsec) is much larger than that of the hole injection stress in which stress gate bias voltage is same as the operation condition. Then the recovery rate of conventional stress becomes same as that of the high hole injection stress but it is still larger than that of the low hole injection stress. It is considered that the conventional stress causes the excess trap occupation and the different degradation from the operation condition. The low hole injection under the same gate voltage as the operation condition causes the same degradation and recovery mechanisms as operation condition. An accurate NBTI lifetime prediction based on the gate voltage acceleration stress is very difficult especially when using the On-the-Fly characterization method.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Pages339-350
Number of pages12
Edition2
DOIs
Publication statusPublished - 2009 Dec 1
EventInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: 2009 May 242009 May 29

Publication series

NameECS Transactions
Number2
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
CountryUnited States
CitySan Francisco, CA
Period09/5/2409/5/29

ASJC Scopus subject areas

  • Engineering(all)

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