Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces

Hiroaki Tanaka; Akinobu Teramoto; Rihito Kuroda; Yukihisa Nakao; Tomoyuki Suwa; Kazumasa Kawase; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1149/1.3633317

Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces

Hiroaki Tanaka, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Tomoyuki Suwa, Kazumasa Kawase, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

The electrical and physical properties of ErSi _x on ç-type Si(IOO) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and the obtained SBH is larger than 0.4 eV on a Si(551) surface, while this difference is caused by the quantity of Si atoms in ErSi _x and on Si(100) this is less than on Si(551). These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

Original language	English
Title of host publication	ULSI Process Integration 7
Pages	365-373
Number of pages	9
Edition	7
DOIs	https://doi.org/10.1149/1.3633317
Publication status	Published - 2011
Event	7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 9 → 2011 Oct 14

Publication series

Name	ECS Transactions
Number	7
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th Symposium on ULSI Process Integration - 220th ECS Meeting
Country	United States
City	Boston, MA
Period	11/10/9 → 11/10/14

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3633317

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Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces. / Tanaka, Hiroaki; Teramoto, Akinobu; Kuroda, Rihito; Nakao, Yukihisa; Suwa, Tomoyuki; Kawase, Kazumasa; Sugawa, Shigetoshi; Ohmi, Tadahiro.

ULSI Process Integration 7. 7. ed. 2011. p. 365-373 (ECS Transactions; Vol. 41, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanaka, H, Teramoto, A, Kuroda, R, Nakao, Y, Suwa, T, Kawase, K, Sugawa, S & Ohmi, T 2011, Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces. in ULSI Process Integration 7. 7 edn, ECS Transactions, no. 7, vol. 41, pp. 365-373, 7th Symposium on ULSI Process Integration - 220th ECS Meeting, Boston, MA, United States, 11/10/9. https://doi.org/10.1149/1.3633317

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abstract = "The electrical and physical properties of ErSi x on {\c c}-type Si(IOO) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and the obtained SBH is larger than 0.4 eV on a Si(551) surface, while this difference is caused by the quantity of Si atoms in ErSi x and on Si(100) this is less than on Si(551). These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.",

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AU - Tanaka, Hiroaki

AU - Teramoto, Akinobu

AU - Kuroda, Rihito

AU - Nakao, Yukihisa

AU - Suwa, Tomoyuki

AU - Kawase, Kazumasa

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2011

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N2 - The electrical and physical properties of ErSi x on ç-type Si(IOO) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and the obtained SBH is larger than 0.4 eV on a Si(551) surface, while this difference is caused by the quantity of Si atoms in ErSi x and on Si(100) this is less than on Si(551). These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

AB - The electrical and physical properties of ErSi x on ç-type Si(IOO) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and the obtained SBH is larger than 0.4 eV on a Si(551) surface, while this difference is caused by the quantity of Si atoms in ErSi x and on Si(100) this is less than on Si(551). These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

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BT - ULSI Process Integration 7

T2 - 7th Symposium on ULSI Process Integration - 220th ECS Meeting

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Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces

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