Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces

Hiroaki Tanaka, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Tomoyuki Suwa, Kazumasa Kawase, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The electrical and physical properties of ErSi x on ç-type Si(IOO) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and the obtained SBH is larger than 0.4 eV on a Si(551) surface, while this difference is caused by the quantity of Si atoms in ErSi x and on Si(100) this is less than on Si(551). These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages365-373
Number of pages9
Edition7
DOIs
Publication statusPublished - 2011
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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