The investigation of the low frequency noise in p - and n -channel semiconductor-on-insulator-metal oxide semiconductor transistors fabricated on (100) and (110) silicon-oriented wafers using high advanced processes has been carried out. While for both orientations the 1f noise in the n -channel transistors can be explained through the ΔN formalism, the p -channel ones seem to follow the Hooge model. In addition, the new orientation presents a noise level higher than the conventional one. Furthermore, the authors showed that when there is a gap of one decade between the Si(100) and Si(110) p -channel transistors, this one has been reduced to a factor of 2 in the case of the n -channel ones. Finally, by combining the highly advanced microwave-excited high-density plasma oxidation process with the alkali-free five-step cleaning process, it has been possible to fabricate on both surfaces a very high quality oxide with a very low density of traps.
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2009|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering