Different mechanism to explain the 1f noise in n - And p -SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro Ohmi

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11 Citations (Scopus)

Abstract

The investigation of the low frequency noise in p - and n -channel semiconductor-on-insulator-metal oxide semiconductor transistors fabricated on (100) and (110) silicon-oriented wafers using high advanced processes has been carried out. While for both orientations the 1f noise in the n -channel transistors can be explained through the ΔN formalism, the p -channel ones seem to follow the Hooge model. In addition, the new orientation presents a noise level higher than the conventional one. Furthermore, the authors showed that when there is a gap of one decade between the Si(100) and Si(110) p -channel transistors, this one has been reduced to a factor of 2 in the case of the n -channel ones. Finally, by combining the highly advanced microwave-excited high-density plasma oxidation process with the alkali-free five-step cleaning process, it has been possible to fabricate on both surfaces a very high quality oxide with a very low density of traps.

Original languageEnglish
Pages (from-to)394-401
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number1
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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