Abstract
Using ion-neutralization and photoemission spectroscopies the authors have found that the Si(100)2 multiplied by 1 surface behaves quite differently from Ge(100)2 multiplied by 1 and other Si surfaces when exposed to atomic hydrogen, mercury, and chlorine. Comparison of the results for H chemisorption on these surfaces with theory has led to the conclusion that Ge(100)2 multiplied by 1:H is row dimerized but Si(100)2 multiplied by 1:H is not. Although no such comparison is now possible for these surfaces with Hg or Cl on them, our experimental work here also points to significant differences in their chemical and/or structural characteristics.
| Original language | English |
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| Title of host publication | Unknown Host Publication Title |
| Pages | 799-802 |
| Number of pages | 4 |
| Volume | 1 |
| Publication status | Published - 1977 |
| Event | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria Duration: 1977 Sep 12 → 1977 Sep 16 |
Other
| Other | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl |
|---|---|
| City | Vienna, Austria |
| Period | 77/9/12 → 77/9/16 |
ASJC Scopus subject areas
- Engineering(all)