DIFFERENCES IN CHEMISORPTION CHARACTERISTICS OF Si(100) AND Ge(100) SURFACES.

T. Sakurai, H. D. Hagstrum

    Research output: Chapter in Book/Report/Conference proceedingChapter

    1 Citation (Scopus)

    Abstract

    Using ion-neutralization and photoemission spectroscopies the authors have found that the Si(100)2 multiplied by 1 surface behaves quite differently from Ge(100)2 multiplied by 1 and other Si surfaces when exposed to atomic hydrogen, mercury, and chlorine. Comparison of the results for H chemisorption on these surfaces with theory has led to the conclusion that Ge(100)2 multiplied by 1:H is row dimerized but Si(100)2 multiplied by 1:H is not. Although no such comparison is now possible for these surfaces with Hg or Cl on them, our experimental work here also points to significant differences in their chemical and/or structural characteristics.

    Original languageEnglish
    Title of host publicationUnknown Host Publication Title
    Pages799-802
    Number of pages4
    Volume1
    Publication statusPublished - 1977
    EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
    Duration: 1977 Sep 121977 Sep 16

    Other

    OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
    CityVienna, Austria
    Period77/9/1277/9/16

    ASJC Scopus subject areas

    • Engineering(all)

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