DIFFERENCES IN CHEMISORPTION CHARACTERISTICS OF Si(100) AND Ge(100) SURFACES.

T. Sakurai; H. D. Hagstrum

DIFFERENCES IN CHEMISORPTION CHARACTERISTICS OF Si(100) AND Ge(100) SURFACES.

T. Sakurai, H. D. Hagstrum

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Using ion-neutralization and photoemission spectroscopies the authors have found that the Si(100)2 multiplied by 1 surface behaves quite differently from Ge(100)2 multiplied by 1 and other Si surfaces when exposed to atomic hydrogen, mercury, and chlorine. Comparison of the results for H chemisorption on these surfaces with theory has led to the conclusion that Ge(100)2 multiplied by 1:H is row dimerized but Si(100)2 multiplied by 1:H is not. Although no such comparison is now possible for these surfaces with Hg or Cl on them, our experimental work here also points to significant differences in their chemical and/or structural characteristics.

Original language	English
Title of host publication	Unknown Host Publication Title
Pages	799-802
Number of pages	4
Volume	1
Publication status	Published - 1977
Event	Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria Duration: 1977 Sep 12 → 1977 Sep 16

Other

Other	Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
City	Vienna, Austria
Period	77/9/12 → 77/9/16

ASJC Scopus subject areas

Engineering(all)

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title = "DIFFERENCES IN CHEMISORPTION CHARACTERISTICS OF Si(100) AND Ge(100) SURFACES.",

abstract = "Using ion-neutralization and photoemission spectroscopies the authors have found that the Si(100)2 multiplied by 1 surface behaves quite differently from Ge(100)2 multiplied by 1 and other Si surfaces when exposed to atomic hydrogen, mercury, and chlorine. Comparison of the results for H chemisorption on these surfaces with theory has led to the conclusion that Ge(100)2 multiplied by 1:H is row dimerized but Si(100)2 multiplied by 1:H is not. Although no such comparison is now possible for these surfaces with Hg or Cl on them, our experimental work here also points to significant differences in their chemical and/or structural characteristics.",

author = "T. Sakurai and Hagstrum, {H. D.}",

year = "1977",

language = "English",

volume = "1",

pages = "799--802",

booktitle = "Unknown Host Publication Title",

note = "Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl ; Conference date: 12-09-1977 Through 16-09-1977",

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TY - CHAP

T1 - DIFFERENCES IN CHEMISORPTION CHARACTERISTICS OF Si(100) AND Ge(100) SURFACES.

AU - Sakurai, T.

AU - Hagstrum, H. D.

PY - 1977

Y1 - 1977

N2 - Using ion-neutralization and photoemission spectroscopies the authors have found that the Si(100)2 multiplied by 1 surface behaves quite differently from Ge(100)2 multiplied by 1 and other Si surfaces when exposed to atomic hydrogen, mercury, and chlorine. Comparison of the results for H chemisorption on these surfaces with theory has led to the conclusion that Ge(100)2 multiplied by 1:H is row dimerized but Si(100)2 multiplied by 1:H is not. Although no such comparison is now possible for these surfaces with Hg or Cl on them, our experimental work here also points to significant differences in their chemical and/or structural characteristics.

AB - Using ion-neutralization and photoemission spectroscopies the authors have found that the Si(100)2 multiplied by 1 surface behaves quite differently from Ge(100)2 multiplied by 1 and other Si surfaces when exposed to atomic hydrogen, mercury, and chlorine. Comparison of the results for H chemisorption on these surfaces with theory has led to the conclusion that Ge(100)2 multiplied by 1:H is row dimerized but Si(100)2 multiplied by 1:H is not. Although no such comparison is now possible for these surfaces with Hg or Cl on them, our experimental work here also points to significant differences in their chemical and/or structural characteristics.

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AN - SCOPUS:0017747363

VL - 1

SP - 799

EP - 802

BT - Unknown Host Publication Title

T2 - Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl

Y2 - 12 September 1977 through 16 September 1977

ER -