Dielectric response functions studied by an all-electron mixed-basis approach

Soh Ishii, Kaoru Ohno, Yoshiyuki Kawazoe

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Dielectric response functions for Si and GaAs, which include local-field effects and frequency dependence, are calculated within the Local Density Approximation (LDA) using our original all-electron mixed-basis approach program. The results are in good agreement with other calculations. The local-field effects are small but not negligible for these materials.

Original languageEnglish
Pages (from-to)1209-1212
Number of pages4
JournalMaterials Transactions, JIM
Volume40
Issue number11
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Dielectric response functions studied by an all-electron mixed-basis approach'. Together they form a unique fingerprint.

  • Cite this