Abstract
Dielectric response functions for Si and GaAs, which include local-field effects and frequency dependence, are calculated within the Local Density Approximation (LDA) using our original all-electron mixed-basis approach program. The results are in good agreement with other calculations. The local-field effects are small but not negligible for these materials.
| Original language | English |
|---|---|
| Pages (from-to) | 1209-1212 |
| Number of pages | 4 |
| Journal | Materials Transactions, JIM |
| Volume | 40 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1999 |
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Ishii, S., Ohno, K., & Kawazoe, Y. (1999). Dielectric response functions studied by an all-electron mixed-basis approach. Materials Transactions, JIM, 40(11), 1209-1212. https://doi.org/10.2320/matertrans1989.40.1209