Dielectric relaxation phenomenon of rare earth Nd3+ modified bismuth layer ferroelectric ceramics fabricated by plasma active sintering method

Yoichiro Masuda, Akira Baba, Mamoru Ohmori, Hiroshi Masumoto, Takashi Gotoh, Toshio Hirai, Koichiro Sakata

Research output: Contribution to journalArticlepeer-review

Abstract

The crystalline structure, dielectric relaxation and ferroelectric properties of the solid solution, NdxBi4-xTi3O12 (NBIT) compound were measured. The Curie temperature of the NBIT ceramics was determined to be 490°C from dielectric measurements. The dielectric constant of the NBIT ceramics shows a small anisotropic property. Polarization switching was observed using a Sawyer-Tower circuit at 50 Hz. Remnant polarizations and coercise fields could not be confirmed since the hysteresis loops were not saturated. The large dielectric relaxation is observed in the frequency range between 100 kHz and 1 MHz.

Original languageEnglish
Pages (from-to)35-45
Number of pages11
JournalIntegrated Ferroelectrics
Volume13
Issue number1-3
DOIs
Publication statusPublished - 1996

Keywords

  • Bismuth layer structure ferroelectrics (BLSF)
  • Dielectric relaxation
  • NdBiTiO
  • Plasma active sinterinng

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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