Dielectric property of (001) one-axis oriented CaBi4Ti 4O15-based thin films and their temperature dependence

Yohta Kondoh, Shota Ogawa, Junichi Kimura, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo, Hiroshi Uchida

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We proposed a thin-film capacitor with a stable temperature coefficient of capacitance (TCC) based on bismuth layer-structured dielectrics, CaBi 4Ti4O15. Two types of doping were conducted to lower the dielectric loss in a higher temperature range above 300°C, i.e., Mn ion to compensate for lattice defects in crystalline grains and Bi 12SiO20 to form a grain boundary phase were attempted in order to improve the insulating property of the oriented CaBi4Ti 4O15 films. (00l) one-axis oriented Mn-doped or Bi 12SiO20-doped CaBi4Ti4O15 films (with Mn or Bi12SiO20 content up to 3.0 or 1.75%) were fabricated successfully on (111)Pt/ TiO2/(100)Si substrates buffered by (001)Ca2Nb3O10 nanosheets. These films exhibited a relatively lower loss factor in the temperature range from R.T. up to 400°C. In particular, the behavior of TCC on the Bi 12SiO20-doped CaBi4Ti4O15 film was significantly stable, with a change in capacitance, Δ C/C R.T., within ±10% even at 400°C.

Original languageEnglish
Pages (from-to)477-482
Number of pages6
JournalJournal of the Ceramic Society of Japan
Issue number1426
Publication statusPublished - 2014 Jun


  • Calcium bismuth titanate
  • Chemical solution deposition (CSD)
  • Dielectrics
  • Doping
  • Temperature coefficient of capacitance (TCC)
  • Thin film

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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