TY - JOUR
T1 - Dielectric properties of lead zirconate titanate thin films seeded with barium strontium titanate nanoparticles
AU - Tanase, Tomokazu
AU - Kobayashi, Yoshio
AU - Nabatame, Toshihide
AU - Miwa, Takao
AU - Konno, Mikio
N1 - Funding Information:
This research was partially supported by the Ministry of Education, Culture, Sports, Science and Technology, a Grant-in-Aid for the COE project, Giant Molecules and Complex Systems.
PY - 2005/1/3
Y1 - 2005/1/3
N2 - A low temperature synthetic method recently proposed by the authors was applied to the fabrication of lead zirconate titanate (PZT) thin films containing crystalline seeds of barium strontium titanate (BST) nanoparticles. PZT precursor and the BST particles were prepared with complex alkoxide methods. Precursor solution suspending the BST particles was spin-coated on Pt/Ti/SiO2/Si substrate to film thickness of 500-800 nm at particle concentrations of 0-25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400°C in unseeded PZT films, and induced crystallization of PZT into perovskite structures at 420°C, which was more than 100°C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450°C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1 × 10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.
AB - A low temperature synthetic method recently proposed by the authors was applied to the fabrication of lead zirconate titanate (PZT) thin films containing crystalline seeds of barium strontium titanate (BST) nanoparticles. PZT precursor and the BST particles were prepared with complex alkoxide methods. Precursor solution suspending the BST particles was spin-coated on Pt/Ti/SiO2/Si substrate to film thickness of 500-800 nm at particle concentrations of 0-25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400°C in unseeded PZT films, and induced crystallization of PZT into perovskite structures at 420°C, which was more than 100°C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450°C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1 × 10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.
KW - Crystalline seeds
KW - Crystallization temperature
KW - Dielectric properties
KW - Lead zirconate titanate
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U2 - 10.1016/j.tsf.2004.04.048
DO - 10.1016/j.tsf.2004.04.048
M3 - Article
AN - SCOPUS:10644245236
VL - 471
SP - 71
EP - 75
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -