Dielectric properties of lead zirconate titanate thin films seeded with barium strontium titanate nanoparticles

Tomokazu Tanase; Yoshio Kobayashi; Toshihide Nabatame; Takao Miwa; Mikio Konno

doi:10.1016/j.tsf.2004.04.048

Dielectric properties of lead zirconate titanate thin films seeded with barium strontium titanate nanoparticles

Tomokazu Tanase, Yoshio Kobayashi, Toshihide Nabatame, Takao Miwa, Mikio Konno

ENG - Chemical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A low temperature synthetic method recently proposed by the authors was applied to the fabrication of lead zirconate titanate (PZT) thin films containing crystalline seeds of barium strontium titanate (BST) nanoparticles. PZT precursor and the BST particles were prepared with complex alkoxide methods. Precursor solution suspending the BST particles was spin-coated on Pt/Ti/SiO₂/Si substrate to film thickness of 500-800 nm at particle concentrations of 0-25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400°C in unseeded PZT films, and induced crystallization of PZT into perovskite structures at 420°C, which was more than 100°C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450°C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1 × 10^-6 A/cm² at applied electric field from 0 to 64 kV/cm.

Original language	English
Pages (from-to)	71-75
Number of pages	5
Journal	Thin Solid Films
Volume	471
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.04.048
Publication status	Published - 2005 Jan 3

Keywords

Crystalline seeds
Crystallization temperature
Dielectric properties
Lead zirconate titanate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Dielectric properties of lead zirconate titanate thin films seeded with barium strontium titanate nanoparticles",

abstract = "A low temperature synthetic method recently proposed by the authors was applied to the fabrication of lead zirconate titanate (PZT) thin films containing crystalline seeds of barium strontium titanate (BST) nanoparticles. PZT precursor and the BST particles were prepared with complex alkoxide methods. Precursor solution suspending the BST particles was spin-coated on Pt/Ti/SiO2/Si substrate to film thickness of 500-800 nm at particle concentrations of 0-25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400°C in unseeded PZT films, and induced crystallization of PZT into perovskite structures at 420°C, which was more than 100°C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450°C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1 × 10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.",

keywords = "Crystalline seeds, Crystallization temperature, Dielectric properties, Lead zirconate titanate",

author = "Tomokazu Tanase and Yoshio Kobayashi and Toshihide Nabatame and Takao Miwa and Mikio Konno",

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T1 - Dielectric properties of lead zirconate titanate thin films seeded with barium strontium titanate nanoparticles

AU - Tanase, Tomokazu

AU - Kobayashi, Yoshio

AU - Nabatame, Toshihide

AU - Miwa, Takao

AU - Konno, Mikio

PY - 2005/1/3

Y1 - 2005/1/3

N2 - A low temperature synthetic method recently proposed by the authors was applied to the fabrication of lead zirconate titanate (PZT) thin films containing crystalline seeds of barium strontium titanate (BST) nanoparticles. PZT precursor and the BST particles were prepared with complex alkoxide methods. Precursor solution suspending the BST particles was spin-coated on Pt/Ti/SiO2/Si substrate to film thickness of 500-800 nm at particle concentrations of 0-25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400°C in unseeded PZT films, and induced crystallization of PZT into perovskite structures at 420°C, which was more than 100°C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450°C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1 × 10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.

AB - A low temperature synthetic method recently proposed by the authors was applied to the fabrication of lead zirconate titanate (PZT) thin films containing crystalline seeds of barium strontium titanate (BST) nanoparticles. PZT precursor and the BST particles were prepared with complex alkoxide methods. Precursor solution suspending the BST particles was spin-coated on Pt/Ti/SiO2/Si substrate to film thickness of 500-800 nm at particle concentrations of 0-25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400°C in unseeded PZT films, and induced crystallization of PZT into perovskite structures at 420°C, which was more than 100°C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450°C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1 × 10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.

KW - Crystalline seeds

KW - Crystallization temperature

KW - Dielectric properties

KW - Lead zirconate titanate

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