Abstract
We have found that the nanoscale defective structure of the {113} extended defect in silicon which consists of no dangling bond gives rise to the change of dielectric properties by means of high-resolution transmission electron energy-loss spectroscopy (HR-TEELS). The dielectric functions of nanoscale regimes were determined from the loss-functions by the Kramers-Kronig analysis. The peak in the imaginary part of the dielectric function ε2 measured from the defective region shifts at 2.0-2.5 eV. We attribute the result to the nonvertical interband transitions between the localized defect states at the band edges and/or the effect of the periodicity breakdown.
Original language | English |
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Pages (from-to) | 311-317 |
Number of pages | 7 |
Journal | Journal of Electron Microscopy |
Volume | 47 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1998 Jan 1 |
Keywords
- Ab-initio calculation
- Dielectric function
- EELS
- Extended defect
- Interband transition
- JDOS
ASJC Scopus subject areas
- Instrumentation