Dielectric properties of extended defects in silicon studied by high-resolution transmission EELS

Hideo Kohno, Toshinobu Mabuchi, Seiji Takeda, Masanori Kohyama, Masami Terauchi, Michiyoshi Tanaka

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    9 Citations (Scopus)

    Abstract

    We have found that the nanoscale defective structure of the {113} extended defect in silicon which consists of no dangling bond gives rise to the change of dielectric properties by means of high-resolution transmission electron energy-loss spectroscopy (HR-TEELS). The dielectric functions of nanoscale regimes were determined from the loss-functions by the Kramers-Kronig analysis. The peak in the imaginary part of the dielectric function ε2 measured from the defective region shifts at 2.0-2.5 eV. We attribute the result to the nonvertical interband transitions between the localized defect states at the band edges and/or the effect of the periodicity breakdown.

    Original languageEnglish
    Pages (from-to)311-317
    Number of pages7
    JournalJournal of Electron Microscopy
    Volume47
    Issue number4
    DOIs
    Publication statusPublished - 1998 Jan 1

    Keywords

    • Ab-initio calculation
    • Dielectric function
    • EELS
    • Extended defect
    • Interband transition
    • JDOS

    ASJC Scopus subject areas

    • Instrumentation

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