Dielectric properties of chemically vapour-deposited Si3N4

Takashi Goto, Toshio Hirai

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28 Citations (Scopus)

Abstract

The dielectric properties of chemically vapour-deposited (CVD) amorphous and crystalline Si3N4 were measured in the temperature range from room temperature to 800° C. The a.c. conductivity (σa.c.) of the amorphous CVD-Si3N4 was found to be less than that of the crystalline CVD-Si3N4 below 500° C, but became greater than that of the crystalline CVD-Si3N4 over 500° C due to the contribution of d.c. conductivity (σd.c.). The measured loss factor (e{open}″) and dielectric constant (ε′) of the amorphous CVD-Si3N4 are smaller than those of the crystalline CVD-Si3N4 in all of the temperature and frequency ranges examined. The relationships of ε″ αωn-1, (ε′-ε′) αωn-1 and ε″/(ε′-ε′) = cot (nπ/2) (were observed for the amorphous and crystalline specimens, where ω is angular frequency and n is a constant. The values of n of amorphous and crystalline CVD-Si3N4 were 0.8 to 0.9 and 0.6 to 0.8, respectively. These results may indicate that the a.c. conduction observed for both of the above specimens is caused by hopping carriers. The values of loss tangent (tan δ) increased with increasing temperature. The relationship of log (tan δ) ∝T was observed. The value of tan δ for the amorphous CVD-Si3N4 was smaller than that of the crystalline CVD-Si3N4.

Original languageEnglish
Pages (from-to)821-826
Number of pages6
JournalJournal of Materials Science
Volume24
Issue number3
DOIs
Publication statusPublished - 1989 Mar 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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