Dielectric Properties of Ba(Ti0.85Zr0.15)O 3 Film Prepared by Metalorganic Chemical Vapor Deposition

Tetsuro Tohma, Hiroshi Masumoto, Takashi Goto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ba(Ti0.85Zr0.15)O3 films were prepared at 973 K on (100)Pt/(100)MgO substrates by metalorganic chemical vapor deposition (MOCVD), and their dielectric properties were investigated. The dielectric constant (ε′) of the film changed depending on the ac electric field (Eac) and frequency at temperatures below 400 K. The ε′ showed a broad maximum at a specific temperature (TM) that decreased from 370 to 330K with increasing Eac from 0.15 × 105 to 15 × 105 V·m-1. The film exhibited ferroelectric characteristics with remanent polarization (2Pr) of 3 × 10-2 C·m-2 and coercive field (2E C) of 14 × 105V·m-1.

Original languageEnglish
Pages (from-to)6969-6972
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number11
Publication statusPublished - 2003 Nov 1

Keywords

  • Ba(TiZr )O
  • Barium titanate
  • Barium zirconate
  • Dielectric properties
  • Domain
  • Ferroelectric
  • Film
  • MOCVD
  • Relaxor
  • Scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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