Dielectric properties of BaTi 2 O 5 thick films prepared on Pt-coated MgO(110) single-crystal substrate by laser chemical vapor deposition

Dongyun Guo, Yang Ju, Akihiko Ito, Takashi Goto, Chuanbin Wang, Qiang Shen, Rong Tu, Zhixiong Huang, Lianmeng Zhang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

BaTi 2 O 5 (BT 2 ) films were deposited on Pt-coated MgO(110) single-crystal substrates by laser chemical vapor deposition. The single-phase BT 2 thick films were deposited at high deposition rates. The BT 2 thick films consisted of elongated grains with columnar cross-section. With increasing the deposition temperature (T dep ), the orientation of BT 2 thick films changed from (112) to (511), and the grain size increased. The (112)-oriented BT 2 thick film deposited at T dep =956 K had dielectric constant (ϵ′) of 67 and dielectric loss (tanδ) of 0.015, while the (511)-oriented BT 2 thick film deposited at T dep =964 K had ϵ′ of 74 and tanδ of 0.019 at 300 K and 1 MHz.

Original languageEnglish
Pages (from-to)11464-11467
Number of pages4
JournalCeramics International
Volume42
Issue number9
DOIs
Publication statusPublished - 2016 Jul 1

Keywords

  • BaTi O thick films
  • Laser CVD
  • Laser power
  • Morphology
  • Orientation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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