Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

Hiroshi Masumoto, T. Tohma, Takashi Goto, T. Smirnova, Y. Masuda, T. Hirai

Research output: Contribution to conferencePaperpeer-review

Abstract

BaTiO3 films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt - coated fused silica and (100)MgO substrates. Ba(DPM)2 and Ti(O-i-C3H7)2(DPM)2 were used as Ba and Ti sources, respectively. BaTiO3 films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature.

Original languageEnglish
Pages841-844
Number of pages4
Publication statusPublished - 2000 Dec 1
Event12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States
Duration: 2000 Jul 212000 Aug 2

Other

Other12th IEEE International Symposium on Applications of Ferroelectrics
CountryUnited States
CityHonolulu, HI
Period00/7/2100/8/2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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