TY - JOUR
T1 - Dielectric properties of Ba 4Ti 13O 30 film prepared by laser chemical vapor deposition
AU - Guo, Dongyun
AU - Ito, Akihiko
AU - Goto, Takashi
AU - Tu, Rong
AU - Wang, Chuanbin
AU - Shen, Qiang
AU - Zhang, Lianmeng
N1 - Funding Information:
Acknowledgements This study was supported in part by Global COE Program of the Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470).
PY - 2012/2
Y1 - 2012/2
N2 - The effect of frequency and temperature on dielectric properties of Ba 4Ti 13O 30 film was investigated by preparing the film on Pt/Ti/SiO 2/Si substrate by laser chemical vapor deposition (LCVD). The substrate was heated on a hot stage at a pre-heating temperature of 773 K. The crystal structure was analyzed by X-ray diffraction using CuKα X-ray radiation. The grains were regularly arranged along the perpendicular direction to the substrate and the microstructure of columnar grains near the substrate interface consisted of fine grains which grew into larger columnar grains. At low frequency, all kinds of polarization can keep up with reversal of external electric field. The film showed the similar dielectric properties with that of BaTi 4O 9 ceramic, which indicate that the film might be used to microwave devices.
AB - The effect of frequency and temperature on dielectric properties of Ba 4Ti 13O 30 film was investigated by preparing the film on Pt/Ti/SiO 2/Si substrate by laser chemical vapor deposition (LCVD). The substrate was heated on a hot stage at a pre-heating temperature of 773 K. The crystal structure was analyzed by X-ray diffraction using CuKα X-ray radiation. The grains were regularly arranged along the perpendicular direction to the substrate and the microstructure of columnar grains near the substrate interface consisted of fine grains which grew into larger columnar grains. At low frequency, all kinds of polarization can keep up with reversal of external electric field. The film showed the similar dielectric properties with that of BaTi 4O 9 ceramic, which indicate that the film might be used to microwave devices.
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U2 - 10.1007/s10853-011-5941-6
DO - 10.1007/s10853-011-5941-6
M3 - Article
AN - SCOPUS:84862909188
VL - 47
SP - 1559
EP - 1561
JO - Journal of Materials Science
JF - Journal of Materials Science
SN - 0022-2461
IS - 3
ER -