Dielectric properties of Ba 4Ti 13O 30 film prepared by laser chemical vapor deposition

Dongyun Guo, Akihiko Ito, Takashi Goto, Rong Tu, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The effect of frequency and temperature on dielectric properties of Ba 4Ti 13O 30 film was investigated by preparing the film on Pt/Ti/SiO 2/Si substrate by laser chemical vapor deposition (LCVD). The substrate was heated on a hot stage at a pre-heating temperature of 773 K. The crystal structure was analyzed by X-ray diffraction using CuKα X-ray radiation. The grains were regularly arranged along the perpendicular direction to the substrate and the microstructure of columnar grains near the substrate interface consisted of fine grains which grew into larger columnar grains. At low frequency, all kinds of polarization can keep up with reversal of external electric field. The film showed the similar dielectric properties with that of BaTi 4O 9 ceramic, which indicate that the film might be used to microwave devices.

Original languageEnglish
Pages (from-to)1559-1561
Number of pages3
JournalJournal of Materials Science
Volume47
Issue number3
DOIs
Publication statusPublished - 2012 Feb

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Dielectric properties of Ba <sub>4</sub>Ti <sub>13</sub>O <sub>30</sub> film prepared by laser chemical vapor deposition'. Together they form a unique fingerprint.

Cite this