Dielectric confinement effect on excitons in PbI4-based layered semiconductors

X. Hong, T. Ishihara, A. V. Nurmikko

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589 Citations (Scopus)


By varying the dielectric environment in new PbI4-based layer-type perovskite compounds, we have demonstrated directly the contribution by dielectric confinement to the exciton binding energy in three such natural-quantum-well semiconductors. With different dielectric environment, exciton binding energies of 320, 220, and 170 meV have been observed, dominated by the dielectric confinement. In terms of the conventional size-related electronic confinement, two of the materials represent monolayer PbI4 quantum wells while the third corresponds to a bilayer case, with a corresponding reduction in the electronic confinement. From theory, including the dielectric confinement effect, the effective mass of the exciton in a PbI4-based dielectric quantum well has been determined to be 0.09me; the corresponding quasi-two-dimensional exciton Bohr radii were 15.5, 17.0, and 20.5 for the three cases, respectively.

Original languageEnglish
Pages (from-to)6961-6964
Number of pages4
JournalPhysical Review B
Issue number12
Publication statusPublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


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